1N6002B 반도체 회로 부품 판매점
SILICON ZENER DIODES
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 Central Semiconductor |
1N5985B THRU 1N6020B
SILICON ZENER DIODES
500mW, 2.4 THRU 68 VOLTS
5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5985B series
are high quality silicon Zener diodes designed for low
leakage applications.
DO-35 CASE
MAXIMUM RATINGS: (TL=50°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
500
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TL=30°C) VF=1.5V MAX @ IF=100mA (for all types)
TYPE
ZENER
VOLTAGE
VZ @ IZT
TEST
CURRENT
MAXIMUM ZENER
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
MIN NOM MAX
VVV
IZT
ZZT @ IZT
ZZK @ IZK
mA Ω Ω mA
IR @ VR
μA V
1N5985B
2.280 2.4 2.520
5.0
100
1.8K
0.25
100
1.0
1N5986B
2.565 2.7 2.835
5.0
100
1.9K
0.25
75
1.0
1N5987B
2.850 3.0 3.150
5.0
95
2.0K
0.25
50
1.0
1N5988B
3.135 3.3 3.465
5.0
95
2.2K
0.25
25
1.0
1N5989B
3.420 3.6 3.780
5.0
90
2.3K
0.25
15
1.0
1N5990B
3.705 3.9 4.095
5.0
90
2.4K
0.25
10
1.0
1N5991B
4.085 4.3 4.515
5.0
88
2.5K
0.25
5.0
1.0
1N5992B
4.465 4.7 4.935
5.0
70
2.2K
0.25
3.0
1.5
1N5993B
4.845 5.1 5.355
5.0
50
2.05K
0.25
2.0
2.0
1N5994B
5.320 5.6 5.880
5.0
25
1.8K
0.25
2.0
3.0
1N5995B
5.890 6.2 6.510
5.0
10
1.3K
0.25
1.0
4.0
1N5996B
6.460 6.8 7.140
5.0
8.0
750 0.25
1.0
5.2
1N5997B
7.125 7.5 7.875
5.0
7.0
600 0.25
0.5
6.0
1N5998B
7.790 8.2 8.610
5.0
7.0
600 0.25
0.5
6.5
1N5999B
8.645 9.1 9.555
5.0
10
600 0.25
0.1
7.0
1N6000B
9.500 10 10.50
5.0
15
600 0.25
0.1
8.0
1N6001B
10.45 11 11.55
5.0
18
600 0.25
0.1
8.4
1N6002B
11.40 12 12.60
5.0
22
600 0.25
0.1
9.1
1N6003B
12.35 13 13.65
5.0
25
600 0.25
0.1
9.9
1N6004B
14.25 15 15.75
5.0
32
600 0.25
0.1
11
1N6005B
15.20 16 16.80
5.0
36
600 0.25
0.1
12
1N6006B
17.10 18 18.90
5.0
42
600 0.25
0.1
14
1N6007B
19.00 20 21.00
5.0
48
600 0.25
0.1
15
1N6008B
20.90 22 23.10
5.0
55
600 0.25
0.1
17
1N6009B
22.80 24 25.20
5.0
62
600 0.25
0.1
18
1N6010B
25.65 27 28.35
5.0
70
600 0.25
0.1
21
MAXIMUM
ZENER
CURRENT
IZM
mA
208
185
167
152
139
128
116
106
98
89
81
74
67
61
55
50
45
42
38
33
31
28
25
23
21
19
R1 (9-August 2016)
1N5985B THRU 1N6020B
SILICON ZENER DIODES
500mW, 2.4 THRU 68 VOLT
5% TOLERANCE
TYPE
1N6011B
1N6012B
1N6013B
1N6014B
1N6015B
1N6016B
1N6017B
1N6018B
1N6019B
1N6020B
ZENER
VOLTAGE
VZ @ IZT
MIN NOM MAX
VVV
28.50 30 31.50
31.35 33 34.65
34.20 36 37.80
37.05 39 40.95
40.85 43 45.15
44.65 47 49.35
48.45 51 53.55
53.20 56 58.80
58.90 62 65.10
64.60 68 71.40
TEST
CURRENT
MAXIMUM ZENER
IMPEDANCE
IZT
ZZT @ IZT
ZZK @ IZK
mA Ω Ω mA
5.0 78 600 0.25
5.0 88 700 0.25
5.0 95 700 0.25
5.0 130 800 0.25
2.0 150 900 0.25
2.0
170
1.0K
0.25
2.0
180
1.3K
0.25
2.0
200
1.4K
0.25
2.0
225
1.4K
0.25
2.0
240
1.6K
0.25
MAXIMUM
REVERSE
CURRENT
IR @ VR
μA V
100 23
100 25
100 27
100 30
100 33
100 36
100 39
100 43
100 47
100 52
MAXIMUM
ZENER
CURRENT
IZM
mA
17
15
14
13
12
11
9.8
8.9
8.0
7.4
DO-35 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
R1 (9-August 2016)
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1N6002B diode
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국내 전력반도체 판매점
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