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SILICON 2.0 Watt ZENER DIODES
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 Microsemi |
SMBJ5913B – SMBJ5956B
Available
SILICON 2.0 Watt ZENER DIODES
DESCRIPTION
The SMBJ5913B - SMBJ5956B series of surface mount 2.0 watt Zeners provides a selection
from 3.3 to 200 volts with different tolerance options available. This series is equivalent to the
JEDEC registered 1N5913 thru 1N5956 series with identical electrical characteristics except
these are rated at 2.0 W instead of 1.5 W with the lower thermal resistance features of the
surface mount packaging. Its featured J-bend design in the DO-214AA package is ideal for
greater PC board mounting density. It is also available as RoHS compliant with an e3 suffix.
Microsemi also offers numerous other Zener products to meet higher and lower power
applications.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent to JEDEC registered 1N5913 thru 1N5956.
• Ideal for high-density and low-profile mounting.
• Zener voltage available 3.3 V to 200 V.
• Standard voltage tolerances are plus/minus 5% and 10%.
• A tighter tolerance is available in plus or minus 2%.
• RoHS compliant versions available.
DO-214AA
J-bend Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
Also available in:
DO-215AA package
(Gull-wing surface mount)
SMBG5913 – SMBG5956B
APPLICATIONS / BENEFITS
• Regulates voltage over a broad operating current and temperature range.
• Wide selection from 3.3 to 200 V.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Withstands high surge stresses (see Figure 2).
• Minimal changes of voltage versus current.
• High specified maximum current (IZM) when adequately heat sunk.
• Moisture classification is Level 1 per IPC/JEDEC J-STD-020B with no dry pack required.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead
Thermal Resistance Junction-to-Ambient (1)
Steady-State Power Dissipation @ TL < 80 oC (2)
Forward Voltage @ 200 mA
Solder Temperature @ 10 s
Symbol
TJ and TSTG
RӨJL
RӨJA
PD
VF
TSP
Value
-65 to +150
35
100
2.0
1.2
260
Unit
oC
oC/W
oC/W
W
V
oC
Notes: 1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page).
2. Or 1.25 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (also see
Figure 1.)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01101-2, Rev. 1 (XXXX)
©2012 Microsemi Corporation
Page 1 of 5
SMBJ5913B – SMBJ5956B
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750, method 2026.
• MARKING: Part number without SMBx prefix (e.g. 5914B, 5914Be3, MX5946C, 5956D, etc.).
• POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
• TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Consult factory for
quantities.
• WEIGHT: 0.1 grams
• See Package Dimensions on last page.
Surface Mount Package
600 W Power Level
J-Bend Lead Frame
JEDEC type number
(See Electrical
Characteristics table)
PART NOMENCLATURE
SM B J 5914 A (e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Breakdown Voltage Tolerance
A = +/- 10%
B = +/- 5%
C = +/- 2%
Symbol
IR
IZ, IZT, IZK
IZM
VR
VZ
ZZT or ZZK
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
Reverse Voltage: The reverse voltage dc value, no alternating component.
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
RF01101-2, Rev. 1 (XXXX)
©2012 Microsemi Corporation
Page 2 of 5
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SMBJ5937B diode
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