M1MA142KT1G 반도체 회로 부품 판매점
Single Silicon Switching Diode
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 ON Semiconductor |
M1MA141KT1G,
M1MA142KT1G
Single Silicon Switching
Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC--70
package which is designed for low power surface mount applications.
Features
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA141KT1
M1MA142KT1
VR
Vdc
40
80
Peak Reverse Voltage
M1MA141KT1
M1MA142KT1
VRM
Vdc
40
80
Forward Current
Peak Forward Current
Peak Forward Surge Current
IF 100 mAdc
IFM 225 mAdc
IFSM
500 mAdc
(Note 1)
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD 150 mW
Junction Temperature
TJ 150 C
Storage Temperature
Tstg -- 55 ~ + 150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
http://onsemi.com
CATHODE
3
ANODE NO CONNECTION
12
3
1
2
SC--70 (SOT--323)
CASE 419
STYLE 2
MARKING DIAGRAM
Mx M G
G
Mx = Device Code
x = H for 141
I for 142
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
M1MA141KT1G
SC--70 3000/Tape & Reel
(Pb--Free)
M1MA142KT1G
SC--70 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
M1MA141KT1/D
M1MA141KT1G, M1MA142KT1G
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic
Reverse Voltage Leakage Current
M1MA141KT1
M1MA142KT1
Forward Voltage
Reverse Breakdown Voltage
M1MA141KT1
M1MA142KT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
Condition
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 mA
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
Symbol
IR
VF
VR
CD
trr
(Note 2)
Min Max Unit
-- 0.1 mAdc
-- 1.2 Vdc
-- Vdc
40
80
-- 2.0 pF
-- 3.0 ns
http://onsemi.com
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M1MA142KT1G diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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