|
ROHM Semiconductor |
Schottky Barrier Diode
RB078BM30S
lApplication
General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) High reliability
3) Low VF
12
lConstruction
Silicon epitaxial planar type
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Open Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 30 V Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
30 V Direct Reverse Voltage
5
A
60Hz half sin Wave resistive load,
Tc=126°C max.
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC
150 °C
-
Storage Temperature
Tstg -55 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - - 0.72 V IF=5.0A
IR - - 5 mA VR=30V
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.04 - Rev.B
RB078BM30S
lElectrical characteristic curves
Data Sheet
10
Tj = 75°C
1 Tj = 125°C
Tj = 150°C
0.1
Tj = 25°C
Tj = -25°C
0.01
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
Tj = 150°C
Tj = 125°C
1000
Tj = 75°C
100
10
1
0.1
0
Tj = 25°C
Tj = -25°C
10 20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
1000
f = 1MHz
680
670
660
650
Tj=25°C
IF=5A
n=30pcs
640
100 630 AVE : 613.7mV
620
610
600
590
10
0
580
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.04 - Rev.B
|