D5V0F3B6LP20 반도체 회로 부품 판매점
USB2.0 and VBUS TVS DIODE ARRAY
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 Diodes |
D5V0F3B6LP20
USB2.0 and VBUS TVS DIODE ARRAY
Product Summary
VBR (min)
28V & 6V
IPP (max)
9.5A & 3.5A
IR (max)
50nA
Description
This new generation TVS is designed to protect sensitive electronics
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
such as cellular phones, digital cameras, and MP3 players.
Applications
Cellular Handsets
Portable Electronics
Computers and Peripheral
Features
Low Profile Package (0.605mm max) and Ultra-small PCB
Footprint Area (2.05 * 2.05mm max) Suitable for Compact
Portable Electronics
3 Bi-directional Channels and 1 VBUS of ESD protection
Typically Used at High Speed Ports such as USB 2.0 OTG
Low Channel Input Capacitance of 0.4pF Typical for I/Os
High Surge Ipp up to 9.5A(10x1000 μs) for VBUS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper Leadframe; Solderable per MIL-
STD-202, Method 208 e4
Weight: 0.0065 grams (Approximate)
Pin #
1, 2
4, 5, 6
3
Center Tab
Description
VBUS
I/Os
Ground
Ground
Pin Description
DFN2020-6
VBUS
VBUS
GND
D+
D-
USBID
Top View
USBID D+ D- VBUS
GND
Schematic
Ordering Information (Note 4)
Product
D5V0F3B6LP20-7
Compliance
Standard
Marking
UV5
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
DFN2020-6
UV5
UV5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
D5V0F3B6LP20
Document number: DS37603 Rev. 1 - 2
1 of 5
www.diodes.com
April 2015
© Diodes Incorporated
Maximum Ratings - VBUS (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, VBUS Pin
ESD Protection – Contact Discharge, VBUS Pin
ESD Protection – Air Discharge, VBUS Pin
Symbol
IPP1
VESD_Contact
VESD_Air
Value
9.5
±30
±30
Maximum Ratings – I/Os (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, I/O Pins
ESD Protection – Contact Discharge, I/O Pins
ESD Protection – Air Discharge, I/O Pins
Symbol
IPP
VESD_Contact
VESD_Air
Value
3.5
±8
±15
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
D5V0F3B6LP20
Unit
Conditions
A 10/1000µs
kV Standard IEC 61000-4-2
kV Standard IEC 61000-4-2
Unit
Conditions
A 8/20µs
kV Standard IEC 61000-4-2
kV Standard IEC 61000-4-2
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics - VBUS (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Forward Voltage
Clamping Voltage
Breakdown Voltage
Channel Input Capacitance
Symbol
Min
Typ
Max
VRWM
—
—
26
IRM — — 50
VF 0.6 0.8 1.2
VCL — — 40
VBR 28 — 31.9
CT — 630 —
Unit
V
nA
V
V
V
pF
Test Conditions
—
VRWM = 26V
IR = 10mA
IPP = 9.5A, tp = 10/1000μS
IR = 1mA
VR = 0V, f = 1MHz
Electrical Characteristics – I/Os (@TA = +25°C unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Reverse Working Voltage
VRWM
—
— 5.5
V
—
Reverse Current (Note 6)
IR — — 50 nA VR = 5.5V
Reverse Breakdown Voltage
VBR 6.0
— 9.95
V IR = 1mA
Reverse Clamping Voltage, Positive Transients
(Note 7)
VCL
—
12 14
V IPP = 1A, tp = 8/20μs
Dynamic Resistance
RDYN
—
1.0
—
Ω IR = 1A, tp = 8/20μs
Capacitance (Note 8)
CT — 0.4 0.5 pF VR = 0V, f = 1MHz, VBUS = 26V
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
8. Measured from any I/O to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
D5V0F3B6LP20
Document number: DS37603 Rev. 1 - 2
2 of 5
www.diodes.com
April 2015
© Diodes Incorporated
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