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Silicon Carbide Schottky Diode
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 Micross |
Silicon Carbide Schottky Diode
600 Volt 3 Amp Hermetic
MYXDS0600-03AAS
Product OaverrvyiewFeatures
• High voltage 600V isolation in a small package outline
• High current 3A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relim• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
P• Screening options available
Benefits
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
Applications
• Harsh environment motor drive
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings*
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current (no AC component)
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-257
Case
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Values
600
600
3.0
18
26
3.2
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
57.3
Units
oC / Watt
March 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
Silicon Carbide Schottky Diode
600 Volt 3 Amp Hermetic
MYXDS0600-03AAS
Electrical Characteristics
Symbols
aryVF
inIR
Qc
PrelimC
Parameters
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Test Conditions
IF = 3A, TJ = 25oC
IF = 3A, TJ = 210oC
VR = 600V, TJ = 25oC
VR = 600V, TJ = 210oC
VR = 600V, TJ = 25oC, IF = 3 A, di/dt = 200 A/μs
VR = 0V, TJ = 25oC, f= 1MHz
VR = 300V, TJ = 25oC, f= 1MHz
VR = 600V, TJ = 25oC, f= 1MHz
Typ Max Units
1.7
Volts
2.8
10 50
μAmps
20 200
6.7 nC
155
13 pF
12
M06Y0X0D-S
03AAS
yywwa
yywwa = Date code and batch
yy = year
ww = week
a = batch
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
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MYXDS0600-03AAS diode
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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