STPSC20H12 반도체 회로 부품 판매점
power Schottky silicon carbide diode
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 STMicroelectronics |
STPSC20H12
1200 V power Schottky silicon carbide diode
Datasheet - production data
AK
K
A
K
TO-220AC
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
Description
The SiC diode, available in TO-220AC, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
20 A
1200 V
175 °C
1.35 V
May 2016
DocID029343 Rev 2
This is information on a product in full production.
1/8
www.st.com
Characteristics
STPSC20H12
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
Forward rms current
1200
38
IF(AV) Average forward current
TC = 155 °C, DC current
20
IFRM
Repetitive peak forward
current
TC = 155 °C, Tj = 175 °C, δ = 0.1
78
Unit
V
A
A
A
IFSM
Surge non repetitive forward
current
tp = 10 ms
sinusoidal
tp = 10 µs square
TC = 25 °C
TC = 150 °C
TC = 25 °C
140
120
700
A
Tstg Storage temperature range
-65 to +175 °C
Tj Operating junction temperature
-40 to +175 °C
Symbol
Rth(j-c) Junction to case
Table 3: Thermal parameters
Parameter
Typ.
value
0.30
Max.
value
0.45
Unit
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 20 A
-
-
-
-
Typ.
10
60
1.35
1.75
Max.
120
800
1.50
2.25
Unit
µA
V
Notes:
(1)Pulse test: tp = 10 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.07 x IF(AV) + 0.059 x IF2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
QCj(1) Total capacitive charge VR = 800 V
-
Cj Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
VR = 800 V, Tc = 25 °C, F = 1 MHz
-
-
Typ.
129
1650
110
Max.
-
-
-
Unit
nC
pF
Notes:
(1)Most accurate value for the capacitive charge: ������������������(������������) = ∫0������������ ������������(������)������������
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STPSC20H12 diode
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