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Leiditech |
Description
The ESD0506M8 is a low capacitance TVS array, utiliz ing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The ESD0506M8 has low capaci-
tance with a typical value at 8pF, and complies with the
IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV
contact discharge. It is assembled into a 8-pin lead-free
SO-8 package. The combination of small size, low ca-
pacitance and high level of ESD protection makes it ideal
for cellular, notebooks, desktops, and other portable ap-
plication.
Features
• Low capacitance: 8pF typical (I/O to GND)
• Ultra low leakage: nA level
• Low operating voltage: 5V
• Low clamping voltage
• Up to 6 lines protects
• JEDEC TTSOP-8 package
• Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±15kV
Contact discharge: ±8kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
• RoHS Compliant
ESD0506M8
6-Line Low Capacitance TVS Diode Array
Mechanical Characteristics
• Package: TSSOP-8
• Lead Finish: Matte Tin
• Case Material: “Green” Molding Compound.
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 3 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Below
Applications
• Cellular Handsets and Accessories
• Personal Digital Assistants
• Notebooks and Handhelds
• Portable Instrumentation
• Digital Cameras
• Peripherals
• Audio Players
• Keypads, Side Keys, LCD Displays
Marking Information
5V06U
01 03
548
Dot indicates pin1
5V06U= device marking code
Dimensions and Pin Configuration
Ordering Information
8 7 65
8 7 65
Part Number Packaging
ESD0506M8 2500/Tape & Reel
Reel Size
13 inch
1 2 34
Circuit Schematic
1 2 34
Pin Schematic
Rev : 01.06.2014
1/4 www.leiditech.com
ESD0506M8
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
IPP
VESD
TJ
Tstg
Value
25
2
±15
±8
−55 to +125
−55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol Min
Reverse Working Voltage
VRWM
Breakdown Voltage
VBR
6
Reverse Leakage Current
Clamping Voltage
IR
VC
Clamping Voltage
VC
Junction Capacitance
CJ
Typ Max Unit Test Condition
5V
V IT = 1mA, any I/O to GND
0.1 µA VRWM = 5V
10.5
V IPP = 1A (8 x 20µs pulse)
12.5
V IPP = 2A (8 x 20µs pulse)
8
pF
VR = 0V, f = 1MHz, any I/O to
GND
Note 1: I/O pins are 1, 2, 3, 4, 5 and 8.
GND pins are 6, 7.
Rev : 01.06.2014
2/4 www.leiditech.com
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