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ESD0506M8 반도체 회로 부품 판매점

6-Line Low Capacitance TVS Diode Array



Leiditech 로고
Leiditech
ESD0506M8 데이터시트, 핀배열, 회로
Description
The ESD0506M8 is a low capacitance TVS array, utiliz ing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The ESD0506M8 has low capaci-
tance with a typical value at 8pF, and complies with the
IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV
contact discharge. It is assembled into a 8-pin lead-free
SO-8 package. The combination of small size, low ca-
pacitance and high level of ESD protection makes it ideal
for cellular, notebooks, desktops, and other portable ap-
plication.
Features
Low capacitance: 8pF typical (I/O to GND)
Ultra low leakage: nA level
Low operating voltage: 5V
Low clamping voltage
Up to 6 lines protects
JEDEC TTSOP-8 package
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±15kV
Contact discharge: ±8kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
RoHS Compliant
ESD0506M8
6-Line Low Capacitance TVS Diode Array
Mechanical Characteristics
Package: TSSOP-8
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
Audio Players
Keypads, Side Keys, LCD Displays
Marking Information
5V06U
01 03
548
Dot indicates pin1
5V06U= device marking code
Dimensions and Pin Configuration
Ordering Information
8 7 65
8 7 65
Part Number Packaging
ESD0506M8 2500/Tape & Reel
Reel Size
13 inch
1 2 34
Circuit Schematic
1 2 34
Pin Schematic
Rev : 01.06.2014
1/4 www.leiditech.com


ESD0506M8 데이터시트, 핀배열, 회로
ESD0506M8
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
IPP
VESD
TJ
Tstg
Value
25
2
±15
±8
−55 to +125
−55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol Min
Reverse Working Voltage
VRWM
Breakdown Voltage
VBR
6
Reverse Leakage Current
Clamping Voltage
IR
VC
Clamping Voltage
VC
Junction Capacitance
CJ
Typ Max Unit Test Condition
5V
V IT = 1mA, any I/O to GND
0.1 µA VRWM = 5V
10.5
V IPP = 1A (8 x 20µs pulse)
12.5
V IPP = 2A (8 x 20µs pulse)
8
pF
VR = 0V, f = 1MHz, any I/O to
GND
Note 1: I/O pins are 1, 2, 3, 4, 5 and 8.
GND pins are 6, 7.
Rev : 01.06.2014
2/4 www.leiditech.com




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ESD0506M8 diode

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6-Line Low Capacitance TVS Diode Array - Leiditech