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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD107WS SCHOTTKY BARRIER DIODE
SOD-323
FEATURES
z Low Forward Voltage Drop
z Guard Ring Die Construction for Transient Protection
z Ideal for Low Logic Level Applications
z Low Capacitance
z Also Available in Lead Free Version
MARKING: SG
SG
SG
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,the normal device
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Non-repetitive peak reverse voltage
Forward current
Non-repetitive Peak Forward Surge
Current @t = 8 .3ms
Power dissipation
TC=25℃
Thermal resistance junction to ambient
Junction temperature
Storage temperature
VRM
IFM
IFSM
Ptot
TөJA
TJ
TSTG
30
100
2
250
400
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VR
VF
IR
CT
Min.
30
Typ.
300
360
430
500
7
Max. Unit
V
mV
550
800
1 µA
pF
Unit
V
mA
A
mW
℃/W
℃
℃
Conditions
IR=100µA
IF=2mA
IF=15mA
IF=50mA
IF=100mA
VR=25V
VR=10V,f=1MHz
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1
D,Mar,2015
Typical Characteristics
Forward Characteristics
100
30
10
3
1
0.3
0.1
0.0
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF (V)
0.5
Capacitance Characteristics
20
Ta=25℃
f=1MHz
15
10
5
0
0 5 10 15 20
REVERSE VOLTAGE VR (V)
1000
300
100
30
10
3
1
0.3
0.1
0
Reverse Characteristics
Ta=100℃
Ta=25℃
5 10 15 20 25 30 35 40
REVERSE VOLTAGE VR (V)
Power Derating Curve
300
250
200
150
100
50
0
0
25 50 75 100
AMBIENT TEMPERATURE Ta (℃)
125
www.cj-elec.com
2
D,Mar,2015
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