BZX85C9V1 반도체 회로 부품 판매점
Zener Diode
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 Taiwan Semiconductor |
Preliminary
BZX85C SERIES
Zener Diode
Voltage Range
2.4 to 212 Volts
1.3Watts Power Dissipation
Features
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to
the international E24 standard. Replace suffix
“C”
Mechanical Data
Case: Molded plastic DO-41
Lead: Axial leads, solderable per
MIIL-STD-202, Method 2025
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 310 mg (approx.)
DO-41
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Notes: 1. Measured with pulses tp=5ms
Symbol
Pd
RθJA
TJ, TSTG
Value
1.3
130
-55 to + 175
2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of
10 mm from case..
3. f = 1KHz.
Units
W
OC /W
OC
02.17.2005/rev. a
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Device
Zener Voltage
Range (Note 1)
Dynamic Resistance
Vz @ Izt
V
Min Max
fZT
(Note 3)
Ohm
IZT
mA
fZT
(Note 3)
Ohms
IZK
mA
Temperature
Coefficient of
Zener Voltage
VZ @ IZ= IZT
% /OC
Min Max
Admissible
Reverse Leakage Zener
Current
Current
(Note 2)
IR VR
IZ
uA V
mA
BZX85C2V7 2.5
2.9 <20 80 <400
1 -0.08 -0.05 <150 1.0
360
BZX85C3V0 2.8
3.2 <20 80 <400
1 -0.08 -0.05 <100 1.0
330
BZX85C3V3 3.1
3.5 <20 80 <400
1 -0.08 -0.05 <40
1.0
300
BZX85C3V6 3.4
3.8 <20 60 <500
1 -0.08 -0.05 <20
1.0
290
BZX85C3V9 3.7
4.1 <15 60 <500
1 -0.07 -0.02 <10
1.0
280
BZX85C4V3 4
4.6 <13 50 <500
1 -0.05 0.01 <3
1.0
250
BZX85C4V7 4.4
5.0 <13 45 <600
1 -0.03 0.04 <3
1.0
215.0
BZX85C5V1 4.8
5.4 <10 45 <500
1 -0.01 0.04 <1
1.5
200.0
BZX85C5V6 5.2
6
<7 45 <400
1
0 0.045 <1 2.0 190.0
BZX85C6V2 5.8 6.6 <4 35 <300 1 0.01 0.055 <1 3.0 170.0
BZX85C6V8 6.4
7.2 <3.5 35 <300
1 0.015 0.06 <1
4.0
155.0
BZX85C7V5 7 7.9 <3 35 <200 0.5 0.02 0.065 <1 4.5 140.0
BZX85C8V2 7.7 8.7 <5 25 <200 0.5 0.03 0.07 <1 6.2 130.0
BZX85C9V1 8.5 9.6 <5 25 <200 0.5 0.035 0.075 <1 6.8 120.0
BZX85C10 9.4 10.6 <7 25 <200 0.5 0.04 0.08 <0.5 7.5
105.0
BZX85C11 10.4 11.6 <8 20 <300 0.5 0.045 0.08 <0.5 8.2
97.0
BZX85C12 11.4 12.7 <9 20 <350 0.5 0.045 0.085 <0.5 9.1
88.0
BZX85C13 12.4 14.1 <10 20 <400 0.5 0.05 0.085 <0.5
10
79.0
BZX85C15 13.8 15.6 <15 15 <500 0.5 0.055 0.09 <0.5
11
71.0
BZX85C16 15.3 17.1 <15 15 <500 0.5 0.055 0.09 <0.5
12
66.0
BZX85C18 16.8 19.1 <20 15 <500 0.5 0.06 0.09 <0.5
13
62.0
BZX85C20 18.8 21.2 <24 10 <600 0.5 0.06 0.09 <0.5
15
56.0
BZX85C22 20.8 23.3 <25 10 <600 0.5 0.06 0.095 <0.5
16
52.0
BZX85C24 22.8 25.6 <25 10 <600 0.5 0.06 0.095 <0.5
18
47.0
BZX85C27 25.1 28.9 <30 8 <750 0.25 0.06 0.095 <0.5 20
41.0
BZX85C30 28 32 <30 8 <1000 0.25 0.06 0.095 <0.5 22
36.0
BZX85C33 31 35 <35 8 <1000 0.25 0.06 0.095 <0.5 24
33.0
BZX85C36 34 38 <40 8 <1000 0.25 0.06 0.095 <0.5 27
30.0
BZX85C39 37 41 <50 6 <1000 0.25 0.06 0.095 <0.5 30
28.0
BZX85C43 40 46 <50 6 <1000 0.25 0.06 0.095 <0.5 33
26.0
BZX85C47 44 50 <90 4 <1500 0.25 0.06 0.095 <0.5 36
23.0
BZX85C51
48
54 <115 4 <1500 0.25 0.06 0.095 <0.5
39
21.0
BZX85C56
52
60 <120 4 <2000 0.25 0.06 0.095 <0.5
43
19.0
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
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BZX85C9V1 diode
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