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ROHM Semiconductor |
Data Sheet
Bi direction ESD Protection Diode
RSB36F2
Applications
ESD Protection
Features
1)Small mold type. (UMD3)
2)High reliability.
3)Bi-directionality.
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Eac同h l寸ea法d has same dimension
(3)
0.15±0.05
Land size figure (Unit : mm)
1.3
0.65
(2)
(0.65) (0.65)
1.3±0.1
(1)
0~0.1
0.7±0.1
0.9±0.1
0.8MIN.
UMD3
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot(year week factory)
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
2.25±0.1
0
4.0±0.1
φ0.5±0.05
1.25±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation (*)
Pd
Junction temperature
Tj
Storage temperature
Tstg
(*) Total two elements
Limits
200
150
−55 to +150
Unit
mW
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Zener voltage
Reverse current
Junction capacitance
VZ 32.4
IR -
Ct -
- 39.6
- 0.1
- 30
V IZ=1mA
μA VR=27V
pF VR=0V , f=1MHz
* Zener voltage (Vz) shall be measured at 40ms after loading current. Rating of per diode.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
RSB36F2 Data Sheet
10
apply voltage
1 Ta=150°C
Ta=75°C
0.1
Ta=25°C
Ta=125°C
Ta=−25°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
45
1000
100
apply voltage
10
Ta=150°C
1 Ta=125°C
0.1
0.01
0.001
0
Ta=75°C
Ta=25°C
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS(1)
30
100
apply voltage
f=1MHz
10
10
apply voltage
Ta=150°C
1
Ta=75°C
0.1 Ta=25°C
Ta=−25°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
Ta=125°C
45
1000
100
10
1
0.1
0.01
0.001
0
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
apply voltage
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS(2)
30
100
apply voltage
f=1MHz
10
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
1
01234
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
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