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ROHM Semiconductor |
Voltage detectors
VOLTAGE DETECTOR IC
with counter timer
BD45XXXG
BD46XXXG
BD45XXXG
BD46XXXG
BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption
VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit
have developed. Delay time is fixed in the IC due to the built-in counter timer to require no external
capacitor. Total 156 types of VOLTAGE DETECTOR ICs including BD45XXXG series (Nch open drain
output) and BD46XXXG series (CMOS output), each of which has 26 kinds in every 0.1V step (2.3~4.8V)
and three kinds of delay time (50msec, 100msec, 200msec) have developed.
Applications
Every kind of appliances with microcontroller and logic circuit
Features
1) Built-in delay time circuit
(Fixed delay time by the built-in ±10% of high-accuracy counter timer)
2) No external capacitor for setting delay time required
3) 3 kinds of delay time: 50msec(Typ.)(BD45XX5G,BD46XX5G)
100msec(Typ.)(BD45XX1G,BD46XX1G)
200msec(Typ.)(BD45XX2G,BD46XX2G)
4) Detection voltage: 2.3V ~ 4.8V 0.1V step
5) High-accuracy detection voltage: ±1.0%
6) Ultra low current consumption:0.85µA typ.
7) Output circuit: Nch open drain(BD45XXXG)
CMOS(BD46XXXG)
8) Package: SSOP5(SMP5C2)
9) Operating temperature range: -40°C ~ +105°C
BD45XXXG
BD46XXXG
5
4
123
2.9±0.2
(5) (4)
1pin : External RESET
control
2pin : Connect to
Sub, GND
3pin : GND
4pin : VOUT
5pin : VDD
(UNIT:mm)
(1) (2) (3)
0.13
+0.05
–0.03
0.95
0.42
+0.05
–0.04
0.1
SSOP5(SMP5C2)
Application Circuit
BD45XXXG
VDD
VDD
BD46XXXG
VDD
VDD
VDD
Vref
Oscillation circuit
counter timer
GND ER
Vout Reset
Vref
Oscillation circuit
counter timer
GND ER
Vout Reset
Pin No.
SSOP5
1 2345
ER
Sub
GND VOUT
VDD
1/4
Voltage detectors
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Limits
Unit
Power supply voltage
VDD – GND
Output Nch open drain output
voltage CMOS output
VOUT
– 0.3 ~ + 10
GND – 0.3 ~ + 10
GND – 0.3 ~ VDD + 0.3
V
V
ER pin input voltage
VCT GND – 0.3 ~ VDD + 0.3
V
Power dissipation:SSOP5 ∗1
Operating temperature range
Storage temperature range
Pd
Topr
Tstg
540
– 40 ~ + 105
– 55 ~ + 125
mW
˚C
˚C
∗1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
BD45XXXG
BD46XXXG
Electrical characteristics (Unless otherwise noted; Ta=-25˚C ~ +105˚C)
Parameter
Symbol Min.
Typ. Max.
Detection voltage
temperature coefficient
∗1 VDET/∆T
—
±100
±360
Hysteresis voltage
∆VDET VDETX0.03 VDETX0.05 VDETX0.08
Circuit current when ON
∗1
Icc1
— 0.70 2.10
— 0.75 2.25
— 0.80 2.40
∗1 — 0.75 2.25
Circuit current when OFF
Icc2 — 0.80 2.40
— 0.85 2.55
Min. operating voltage
VOPL
0.95
—
—
"L" output current
"H" output current
IOL
∗1 IOH
0.4 1.2
2.0 5
1.0 2.2
1.2 2.7
—
—
—
—
Output leak current
∗1 Ilaek
—
— 0.1
"H" transmission
delay time
ER pin "H" voltage
ER pin "L" voltage
∗1 45 50 55
tPLH 90 100 110
180 200 220
∗1 VEH
2.0
—
—
∗1 VEL
—
— 0.8
ER pin input current
IER — 1 10
∗1 This value is guranteed at Ta=25˚C.
Note) RL is not necessary for CMOS output type.
Note) Please refer to the detection voltage of Line-up table.
Unit
ppm/˚C
%
µA
µA
V
mA
mA
µA
V
V
V
µA
Conditions
Ta=-40˚C ~ +105˚C
RL=470KΩ, VDD=L→H→L
VDET=2.3~3.1V
VDD=VDET–0.2V VDET=3.2~4.2V
VDET=4.3~4.8V
VDET=2.3~3.1V
VDD=VDET+2V VDET=3.2~4.2V
VDET=4.3~4.8V
RL=470kΩ, VOL≥0.4V
VDS=0.5V, VDD=1.2V
VDS=0.5V, VDD=2.4V (VDET≥2.7V)
VDS=0.5V, VDD=4.8V VDET=2.3~4.2V
VDS=0.5V, VDD=6.0V VDET=4.3~4.8V
VDD=VDS=10V
RL=100kΩ
CL=100pF
BD45XX5G, BD46XX5G
BD45XX1G, BD46XX1G
BD45XX2G, BD46XX2G
VER=2.0V
Characteristic diagram and Measurement circuit
Output delay time "L → H"
250
(BD4x28xG tPLH)
200
BD45282G
150
100
50
BD45281G
BD45285G
0
-60 -40 -20 0 20 40 60 80 100 120
Ta (°C)
5V
VDET±0.5V
VDD
ER VOUT
GND
RL=100kΩ
100pF
Output delay time "H → L"
50
(BD4x28x tPLH)
40
30
20
10
0
-60 -40 -20 0 20 40 60 80 100 120
Ta (°C)
5V
VDET±0.5V
VDD
ER VOUT
GND
RL=100kΩ
100pF
2/4
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