CPH6201 반도체 회로 부품 판매점
High-Current Switching Applications
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 Sanyo Semicon Device |
Ordering number:ENN5809
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6101/CPH6201
High-Current Switching Applications
Applications
· DC-DC converter, relay drivers, lamp drivers, motor
drivers, strobes.
Package Dimensions
unit:mm
2146A
Features
· Adoption of FBET, MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package permitting applied sets to be
made small and slim (0.9mm).
· High allowable power dissipation.
( ) : CPH6101
Specifications
[CPH6101/6201]
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (600mm2×0.8mm)
Ratings
(–)30
(–)30
(–)6
(–)2
(–)4
(–)400
1.3
150
–55 to +150
Unit
V
V
V
A
A
mA
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=(–)20V, IE=0
VEB=(–)3V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
200 400
150 MHz
(32)19
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1099TS (KOTO) TA-1948 No.5809–1/4
CPH6101/CPH6201
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
Symbol
Conditions
VCE(sat) IC=(–)1.5A, IB=(–)75mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1.5A, IB=(–)75mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified test circuit.
tstg See specified test circuit.
tf See specified test circuit.
PW=20µs
D.C.≤1%
INPUT
IB1
IB2
RB
VR
50Ω
100µF
OUTPUT
RL
470µF
VBE=–5V
VCC=12V
20IB1=–20IB2=IC=500mA
(For PNP, the polarity is reversed.)
Ratings
min typ
(–350)
180
(–)0.85
(–)30
(–)30
(–)6
60(60)
500
(350)
25(25)
max
(–600)
400
(–)1.2
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
No.5809–2/4
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