RQK0603CGDQS 반도체 회로 부품 판매점
Silicon N-Channel MOS FET
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 Renesas |
RQK0603CGDQS
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 205 mΩ typ (VGS = 10 V, ID = 1.4 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “CG”.
REJ03G0577-0400
Rev.4.00
Jun 22, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
60
±20
2.8
4.1
2.8
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.4.00 Jun 22, 2006 page 1 of 6
RQK0603CGDQS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
60
±20
—
—
1.0
—
—
1.8
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
205
240
3.0
130
24
9.3
7.7
38
42
7.0
2.7
0.5
0.4
0.85
Max
—
—
±10
1
2.0
257
336
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1.4 A, VGS = 10 VNote3
ID = 1.4 A, VGS = 4.5 VNote3
ID = 1.4 A, VDS = 10 VNote3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 10 Ω, Rg = 4.7 Ω
VDD = 10 V, VGS = 10 V,
ID = 2.8 A
IF = 1.5 A, VGS = 0Note3
Rev.4.00 Jun 22, 2006 page 2 of 6
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( renesas )
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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관련 데이터시트
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