PTFA241301E 반도체 회로 부품 판매점
Thermally-Enhanced High Power RF LDMOS FET
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 Infineon |
PTFA241301E
PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally-enhanced
130-watt, internally matched GOLDMOS ® FETs intended for ultra-
linear applications. They are characterized for CDMA, CDMA2000,
Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to
2480 MHz. Full gold metallization ensures excellent device lifetime
and reliability.
PTFA241301E
Package H-30260-2
PTFA241301F
Package H-31260-2
Three-carrier CDMA2000 Performance
VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz
45
40 ACP Up
-40
-45
35
ACP Low
30
-50
-55
25 -60
20 -65
Efficiency
15
ALT Up
-70
10 -75
5 -80
36 38 40 42 44 46 48
Output Power, Avg. (dBm)
Features
• Thermally-enhanced packaging, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 2450 MHz
- Average output power = 25 W
- Linear Gain = 14 dB
- Efficiency = 25%
• Typical CW performance, 2420 MHz, 28 V
- Output power at P–1dB = 140 W
- Efficiency = 50%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W
(CW) output power
RF Characteristics
Three-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 25 W average, ƒ = 2450 MHz
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps — 14 — dB
ηD
— 25
—
%
Adjacent Channel Power Ratio
ACPR
— –50
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 05, 2007-05-11
PTFA241301E
PTFA241301F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 130 W PEP, ƒ = 2420 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
13.0
36
—
Typ
14
38
–30
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
——
VDS = 63 V, VGS = 0 V
IDSS
——
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
— 0.07
Operating Gate Voltage
VDS = 28 V, IDQ = 1150 mA
VGS
2 2.4
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
——
Max
—
1.0
10.0
—
3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 130 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
438
2.5
–40 to +150
0.40
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTFA241301E
PTFA241301F
Package Outline
H-30260-2
H-31260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA241301E
PTFA241301F
*See Infineon distributor for future availability.
Data Sheet
2 of 12
Rev. 05, 2007-05-11
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PDF 파일 내의 페이지 : 총 12 페이지
제조업체: Infineon
( infineon )
PTFA241301E data
데이터시트 다운로드 :
[ PTFA241301E.PDF ]
[ PTFA241301E 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
PTFA241301E
Thermally-Enhanced High Power RF LDMOS FET - Infineon
PTFA241301F
Thermally-Enhanced High Power RF LDMOS FET - Infineon