TF252TH 반도체 회로 부품 판매점
N-Channel JFET
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 ON Semiconductor |
Ordering number : ENA0842A
TF252TH
N-Channel JFET
20V, 140 to 350μA, 1.4mS, VTFP
http://onsemi.com
Features
• High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
• Ultrasmall package facilitates miniaturization in end products
• Best suited for use in electret condenser microphone for audio equipments and telephones
• Excellent voltage characteristics
• Excellent transient characteristics
• Adoption of FBET process
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
VGDO
IG
ID
PD
Tj
Storage Temperature
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7031A-001
1.4
0.25 0.1
3
TF252TH-4-TL-H
TF252TH-5-TL-H
0 to 0.02
1
0.45
2
0.2
12
3
1 : Drain
2 : Source
3 : Gate
VTFP
Product & Package Information
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
1
D
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7
TF252TH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=--100μA
Cutoff Voltage
VGS(off)
VDS=2V, ID=1μA
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
IDSS
| yfs |
Ciss
Crss
VDS=2V, VGS=0V
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic
Frequency Characteristic
ΔGVV
ΔGvf
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
f=1kHz to 110Hz
Total Harmonic Distortion
Output Noise Voltage
THD
VNO
VIN=30mV, f=1kHz
VIN=0V, A curve
* : The TF252TH is classified by IDSS as follows : (unit : μA)
Rank
4
5
IDSS
140 to 240
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
5pF 33μF
+
VCC=2V
VCC=1.5V
OSC
VTVM V THD
min
--20
--0.1
140*
0.8
Ratings
typ
--0.4
1.4
3.1
0.95
max
--1.0
350*
Unit
V
V
μA
mS
pF
pF
1.0
--0.6
0.65
--106
--2.0
--1.0
--102
dB
dB
dB
%
dB
Ordering Information
Device
TF252TH-4-TL-H
TF252TH-5-TL-H
Package
VTFP
VTFP
Shipping
8,000pcs./reel
8,000pcs./reel
memo
Pb Free and Halogen Free
No. A0842-2/7
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TF252TH data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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