BF862 반도체 회로 부품 판매점
N-channel junction FET
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 Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BF862
N-channel junction FET
Preliminary specification
1999 Jun 29
Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
FEATURES
• High transition frequency for excellent sensitivity in
AM car radios
• High transfer admittance.
APPLICATIONS
• Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
PINNING SOT23
PIN
1 source
2 drain
3 gate
DESCRIPTION
handbook, halfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VDS
VGS (off)
IDSS
Ptot
|yfs|
Tj
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
CONDITIONS
Ts ≤ 92 °C
MIN.
−
−
10
−
30
−
TYP.
−
−0.7
−
−
40
−
MAX.
20
−
25
225
−
150
UNIT
V
V
mA
mW
mS
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29
2
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BF862 data
데이터시트 다운로드 :
[ BF862.PDF ]
[ BF862 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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