APT12057LFLL 반도체 회로 부품 판매점
POWER MOS 7 FREDFET
|
|
 Advanced Power Technology |
APT12057B2FLL
APT12057LFLL
1200V 22A 0.570Ω
POWER MOS 7 R FREDFET B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering
and Qg. Power MOS 7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT12057B2FLL_LFLL UNIT
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
1200
22
88
±30
±40
690
5.52
-55 to 150
300
22
50
3000
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 11A)
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1200
3
0.570
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
DYNAMIC CHARACTERISTICS
APT12057 B2FLL_LFLL
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 10V
VDD = 600V
ID = 22A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 22A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 800V, VGS = 15V
ID = 22A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 800V VGS = 15V
ID = 22A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -22A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM (IS = -22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
MIN
MIN
TYP
5155
770
130
185
24
120
11
20
36
21
865
420
1390
530
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
22 Amps
88
1.3 Volts
18 V/ns
320 ns
650
18 µC
7
28
220 Amps
TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.18
40 °C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 12.39mH, RG = 25Ω, Peak IL = 22A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -22A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.16
0.9
0.12
0.08
0.04
0
10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Advanced Power Technology
( apt )
APT12057LFLL data
데이터시트 다운로드 :
[ APT12057LFLL.PDF ]
[ APT12057LFLL 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
