B1149 반도체 회로 부품 판매점
PNP Transistor - 2SB1149
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 SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SB1149
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
ICM
Emitter-base voltage
Collector current (DC)
Collector current-peak
PD Total power dissipation
Open collector
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-100
-100
-8
-3.0
-5.0
1.3
15
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1149
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-1.5mA
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
Switching times
-0.9 -1.2
V
-1.5 -2.0
V
-10 µA
-2.0 mA
2000
15000
1000
ton Turn-on time
tstg Storage time
tf Fall time
IC=-1.5A ; IB1=-IB2=-1.5mA
VCC?-40V;RL=27B
0.5 µs
2.0 µs
1.0 µs
hFE-1 Classifications
ML
K
2000-5000 3000-7000 5000-15000
2
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B1149 data
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[ B1149.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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