K9PFGD8U7M-B 반도체 회로 부품 판매점
FLASH MEMORY
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 Samsung |
K9GBGD8X0M
K9LCGD8X1M K9PFGD8X7M
K9HDGD8X5M K9PFGD8X5M
Enterprise
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FLASH MEMORY
K9GBGD8X0M
K9LCGD8X1M
K9HDGD8X5M
K9PFGD8X7M
K9PFGD8X5M
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar appli
cations where Product failure could result in loss of life or personal or physical harm, or any military or defense appli-
cation, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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K9GBGD8X0M
K9LCGD8X1M K9PFGD8X7M
K9HDGD8X5M K9PFGD8X5M
Enterprise
Document Title
Samsung Toggle Mode DDR NAND Specification
Revision History
Revision No
History
0.0
0.1
0.1.5
0.2
0.3
1. Initial issue
1. Restriction of Command latch cycle is noted.
2. Output driver strength impedence values for VccQ=1.8V is added.
1. K9LCGD8U1M-B, K9LCGD8S1M-B are added.
2. K9HDGD8U5M-B, K9HDGD8S5M-B are added.
3. K9PFGD8U7M-B, K9PFGD8S7M-B are added.
4. Ball pitch is changed from 1.4mm to 1.0mm.
1. Package type is changed from 100FBGA t o 180FBGA.
2. Output Driver Strength Values are changed.
3. Note 1 of 5.16 is amended. (Icc1 30mA -> 50mA)
1. Max. tR is changed from 400us to 80us.
2. Typ. tPROG is changed from 1.6ms to 2ms.
0.4 1. K9PFGD8U5M-B, K9PFGD8S5M-B are added.
2. Package dimension is amended.
3. Chip2 Status command(F2h) is added for K9PFGD8X5M.
4. Functional block diagram is modified.
5. A34 is added for K9PFGD8X5M.
6. Absolute maximum ratings are noted for each VccQ.
7. Stand-by current of TTL(ISB1) is deleted.
8. Test conditions of Output High and Low Voltage Level are noted.
9. Min. valid blocks of all products are amended.
10. tR is noted for typical and maximum value.
11. Device resetting time of Erase is changed from 500us to 100us.
12. Timing of Status Read Cycle before Power On sequence is described.
13. Device ID of K9PFGD8X5M is added.
14. Device ID table definitions is amended.
15. Get feature command is deleted.
16. Busy time for Set and Get feature(tFEAT) is deleted.
17. Timing diagram of Driver Strength Register Setting is amended.
18. Interleaving operations for K9PFGD8X5M are added.
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Draft Date
May 26, 2009
Jun. 15, 2009
Jul. 14, 2009
Remark
Advance
Sep. 1, 2009
Sep. 24, 2009
Oct. 22 , 2009
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve
the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about
device. If you have any questions, please contact the SAMSUNG branch office near your office.
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제조업체: Samsung
( samsung )
K9PFGD8U7M-B data
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