FS20SM-6 반도체 회로 부품 판매점
HIGH-SPEED SWITCHING USE
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 Mitsubishi Electric Semiconductor |
FS3UM-16A
MITSUBISHI Nch POWER MOSFET
FS3UM-16A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
¡VDSS ............................................................................... 800V
¡rDS (ON) (MAX) ................................................................ 3.3Ω
¡ID ........................................................................................... 3A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
2.54
φ 3.6
1.0
0.8
2.54 0.5
2.6
qwe
wr
q GATE
q w DRAIN
e SOURCE
r DRAIN
e
TO-220
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
800
±30
3
9
100
–55 ~ +150
–55 ~ +150
2
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3UM-16A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 800V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
800 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
—
2.53
3.30
Ω
—
3.80 4.95
V
2.1 3.5 — S
— 770 — pF
— 77 — pF
— 13 — pF
— 15 — ns
— 15 — ns
— 90 — ns
— 25 — ns
— 1.0 1.5 V
— — 1.25 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10 VGS = 20V
TC = 25°C
10V
Pulse Test
8
MAXIMUM SAFE OPERATING AREA
101
7
5
3 100ms
2
100
7
5
3
2
10–1
7
5
3
2
TC = 25°C
Single Pulse
1ms
10ms
100ms
DC
10–2
3
5 7 101 2 3
5 7 102
23
5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
VGS = 20V
10V
TC = 25°C
Pulse Test
1.6 5V
6
PD = 100W
4
5V
2
4V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
1.2 4.5V
0.8
0.4
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
FS20SM-6 data
데이터시트 다운로드 :
[ FS20SM-6.PDF ]
[ FS20SM-6 다른 제조사 검색 ]
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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