A1825 반도체 회로 부품 판매점
PNP Transistor - 2SA1825
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 Sanyo |
Ordering number:EN3877
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1825/2SC4729
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low collector-to-emitter saturation voltage.
· High Gain-Bandwidth Product.
· Excellent linearity of DC Current Gain.
· Fast switching speed.
Package Dimensions
unit:mm
2084
[2SA1825/2SC4729]
( ) : 2SA1825
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
Output Capacitance
Cob VCB=(–)10V, f=1MHz
E : Emitter
C : Collector
B : Base
SANYO : FLP
Ratings
(–)60
(–)50
(–)6
(–)8
(–)12
(–)2
1.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Ratings
min typ
100*
35
(130)
180
(95)65
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/D051MH (KOTO) No.3877–1/4
2SA1825/2SC4729
Parameter
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
VCE(sat) IC=(–)4A, IB=(–)0.2A
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)4mA, IB=(–)0.2A
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test CIrcuit
Fall Time
tf See specified Test Circuit
* ; 2SA1825/2SC4729 are classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
min typ
(–250)
200
(–)0.95
(–)60
(–)50
(–)6
50
(450)
500
20
max
(–500)
400
(–)1.3
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
Unit (resistance : Ω, capacitance : F)
No.3877–2/4
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