ITS410E2 반도체 회로 부품 판매점
Smart High-Side Power Switch
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 Infineon |
PROFET® ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
Ta
65 V
4.7 ... 42 V
220 mΩ
1.8 A
5A
-30…+85 °C
PG-TO220AB/5
5
Standard
5
1
Straight leads
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
5
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Infineon Technologies AG
1 of 15
2006-Mar-28
PROFET® ITS 410 E2
Pin Symbol
Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage, the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 3)
Load dump
RI3)= 2 Ω,
protection2) VLoadDump =
RL= 6.6 Ω, td= 400 ms,
UA
IN=
+ Vs, UA = 13.5
low or high
V
Vbb
VLoad dump4)
Load current (Short circuit current, see page 4)
IL
Junction temperature
Tj
Operating temperature range
Ta
Storage temperature range
Tstg
Power dissipation (DC), TC ≤ 25 °C
Ptot
Inductive load switch-off energy dissipation, single pulse
Vbb
= 12V,
Tj,start
= 150°C,
TC
= 150°C const.
IL = 1.8 A, ZL =
2.3 H,
0
Ω:
EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
VIN
IIN
IST
Values
65
100
Unit
V
V
self-limited
+150
-30 ...+85
-40 …+105
50
A
°C
W
4.5 J
1 kV
2
-0.5 ... +6
±5.0
±5.0
V
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
Values
Unit
min typ max
-- -- 2.5 K/W
-- -- 75
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
4)
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
2
2006-Mar-28
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