UPD424210-60 반도체 회로 부품 판매점
4 M-BIT DYNAMIC RAM
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 NEC |
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD424210
4 M-BIT DYNAMIC RAM
256K-WORD BY 16-BIT, EDO,
BYTE READ/WRITE MODE
Description
The µPD424210 is a 262,144 words by 16 bits CMOS dynamic RAM with optional EDO.
EDO is a kind of page mode and is useful for the read operation.
The µPD424210 is packaged in 44-pin plastic TSOP (II) and 40-pin plastic SOJ.
Features
• EDO (Hyper page mode)
• 262,144 words by 16 bits organization
• Single power supply
+5.0 V ± 10 % : µPD424210-60, 424210-70
+5.0 V ± 5 % : µPD424210-60-G
Part number
µPD424210-60
µPD424210-60-G
µPD424210-70
Power consumption
Active (MAX.)
880 mW
840 mW
825 mW
Access time
(MAX.)
60 ns
60 ns
70 ns
R/W cycle time
(MIN.)
104 ns
104 ns
124 ns
EDO (Hyper page mode)
cycle time (MIN.)
25 ns
25 ns
30 ns
Part number
µPD424210-60
µPD424210-70
µPD424210-60-G
Refresh cycle
512 cycles/8 ms
512 cycles/8 ms
Refresh
CAS before RAS refresh,
RAS only refresh,
Hidden refresh
Power consumption at standby
(MAX.)
5.5 mW
(CMOS level input)
5.25 mW
(CMOS level input)
The information in this document is subject to change without notice.
Document No. M12941EJ1V0DS00 (1st edition)
Date Published September 1997 N
Printed in Japan
©
1997
Ordering Information
Part number
µPD424210G5-60-7JF
µPD424210G5-60-7JF-G
µPD424210G5-70-7JF
µPD424210LE-60
µPD424210LE-60-G
µPD424210LE-70
Access time
(MAX.)
60
60
70
60
60
70
µPD424210
Package
44-pin plastic TSOP(II)
(400 mil)
40-pin plastic SOJ
(400 mil)
Refresh
CAS before RAS refresh
RAS only refresh
Hidden refresh
2
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