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Everlight Electronics |
ITR8307/L24/F43
Features
․Thin
․Fast response time
․High sensitivity
․Pb free
․High analytic
․Compact
Description
The ITR8307/L24/F43 consist of an infrared emitting diode and an
NPN silicon phototransistor, encased side-by-side on converging
optical axis in a black
thermoplastic housing The phototransistor receives radiation from
the IR only .This is the normal situation. But when an object is in
between, phototransistor could not receive the radiation.
Applications
․Various microcomputer control equipment
․Floppy disk driver
․Cassette type recorder
․Camera
․VCR
Device Selection Guide
Revi1sion Copy:rig4ht © 2010, Everlight All Rights Reserved. Release Date : June.11.2013. Issue RNoe:DleRaX-s0e00D01a44teR:e2v.0413-06-1w3w1w6.:e5v0e:r5li4g.h0t.com
LifecyclePhase:
Expired Period: Forever
DATASHEET
ITR8307/L24/F43
Device No.
IR
PT
Chip Material
GaAs
Silicon
Absolute Maximum Ratings (Ta=25 )
Parameter
Symbol
Input
Power Dissipation at(or below) 25 Free
Air Temperature
Reverse Voltage
Forward Current
Peak Forward Current (*1)
Pulse width 100 s, Duty cycle=1%
Collector Power Dissipation
Output
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature
Storage Temperature
Lead Soldering Temperature (*2)
(1/16 inch form body for 5 seconds)
( 1) tw=100 sec. , T=10 msec.
( 2)
Pd
VR
IF
IFP
PC
IC
B VCEO
B VECO
Topr
Tstg
Tsol
t=5 Sec
LENS COLOR
Water Clear
Water Clear
Ratings
75
6
50
1
100
20
35
6
-25~+85
-30~+90
260
Unit
mW
V
mA
A
mW
mA
V
V
Revi2sion Copy:rig4ht © 2010, Everlight All Rights Reserved. Release Date : June.11.2013. Issue RNoe:DleRaX-s0e00D01a44teR:e2v.0413-06-1w3w1w6.:e5v0e:r5li4g.h0t.com
LifecyclePhase:
Expired Period: Forever
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