TS820-800TG 반도체 회로 부품 판매점
TS820-600T(800T)G - SCRs
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 American First Semiconductor |
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
TS820-600T(800T)G
Simplified outline
TO-220AB
123
Features
• Blocking voltage to 800 V
• On-state RMS current to 8 A
• Ultra low gate trigger current
Applications
• Motor control
• Industrial and domestic lighting
• Heating
• Static switching
Symbol
ak
g
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL PARAMETER
VDRM
Repetitive peak off-state voltages
IT RMS
RMS on-state current
ITSM Non-repetitive peak on-state current
600TG
800TG
Value
600
800
8
73
Unit
V
A
A
SYMBOL
Rth j-c
PARAMETER
Junction to case (DC)
Rth j-a
Junction to ambient (DC)
@ 2010 Copyright By American First Semiconductor
Value
20
70
UNIT
/W
/W
Page 1/5
TS820-600T(800T)G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
V VDRM RRM
IT(RMS)
I T ( AV )
ITSM
I2t
Repetitive peak off-state
Voltages
RMS on-state current
Average on-state current
Non-repetitive peak
on-state current
I2t for fusing
CONDITIONS
all conduction angles
Half sine wave;<=111
half sine wave; Tj = 25
prior to surge
T=10ms
600TG
800TG
t=10ms
t=8.3ms
Tj=25
MIN
-
-
-
-
-
-
DIT/dt
IGM
VRGM
PGM
P G(AV)
Tstg
Tj
Critical rate of rise
of on-state current
IG=2*I ,GT tr
Peak gate current
Tp=20 s
Peak reverse gate voltage
100ns
F=60Hz Tj=125
Tj=125
Peak gate power
Average gate power
Over any 20 ms period
Storage temperature
Operating junction
Temperature
-
-
-
-
-
-40
-
MAX
600
800
8
5
70
73
24.5
50
4
5
5
1
150
1252
UNIT
V
A
A
A
A
A2S
A/ s
A
V
W
W
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
VD=12V; RL=140
VGT
Gate trigger voltage
VD=12V; RL=140
VGD VD=V ;DRM RL=3.3K R =GK 220
IL
Latching current
IG=1mA,R =GK 1k
IH
Holding current
IT=50mA,R =GK 1k
VTO
Threshold voltage
Tj=125
Rd
Dynamic resistance
TJ=125
MIN TYP MAX UNIT
Tj=125
-
-
-
-
-
-
-
- 200 A
- 0.8 V
- 0.1 V
- 6 mA
- 5 mA
- 0.85 V
- 46 m
Dynamic Characteristics
DV/dt
Critical rate of rise of
Off-state voltage
VRG
VTM
VD=65% V ;DRM R =GK 220 ; TJ=125
I =RG 10 A
I =TM 16A tp=380 S
5 - - V/ s
8- -V
- - 1.6 V
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( afs )
TS820-800TG data
데이터시트 다운로드 :
[ TS820-800TG.PDF ]
[ TS820-800TG 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
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