NT5CB512M4BN 반도체 회로 부품 판매점
2Gb DDR3 SDRAM B-Die
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 Nanya |
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Feature
1.5V ± 0.075V / 1.35V -0.0675V/+0.1V (JEDEC
Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable Latency: 6, 7, 8, 9, 10, 11
Programmable Additive Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8 bit prefetch architecture
Output Driver Impedance Control
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS compliance and Halogen free
Packages:
78-Ball BGA for x4 & x8 components
96-Ball BGA for x16 components
Description
The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing
2,147,483,648 bits. It is internally configured as an octal-bank DRAM.
The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA
packages.
REV 1.1
08 / 2010
1
2Gb DDR3 SDRAM B-Die
NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP
NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP
Pin Configuration – 78 balls BGA Package (x4)
< TOP View>
See the balls through the package
1
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
2
VDD
VSSQ
DQ2
NC
VDDQ
VSS
VDD
BA0
A3
A5
3
NC
DQ0
DQS
NC
BA2
A0
A2
x4
7
A NC
B DM
C DQ1
D VDD
E NC
F CK
G
H A10/AP
J NC
K A12/
L A1
8
VSS
VSSQ
DQ3
VSS
NC
VSS
VDD
ZQ
VERFCA
BA1
A4
VDD
VSS
A7
A9 M A11
A13 N A14
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.1
08 / 2010
2
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( nanya )
NT5CB512M4BN data
데이터시트 다운로드 :
[ NT5CB512M4BN.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
