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STT3434 반도체 회로 부품 판매점

N-Channel Enhancement Mode Mos.FET



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SeCoS
STT3434 데이터시트, 핀배열, 회로
Elektronische Bauelemente
STT3434
6.1 A, 30 V, RDS(ON) 34 mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TSOP-6 package is universally used for all commercial-industrial surface mount applications.
APPLICATIONS
z Low on-resistance
z Capable of 2.5V gate drive
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Thermal Resistance Junction-ambient3
Max.
Operating Junction and Storage Temperature Range
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0 0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
θ
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0° 10°
0.30
0.50
0.95 Ref
1.90 Ref
Symbol
VDS
VGS
VGS@ 4.5V, ID @TA=25℃
VGS@ 4.5V, ID @TA=70℃
IDM
PD @TA=25℃
RθJA
Tj, Tstg
Ratings
30
±12
6.1
4.9
30
1.14
0.01
110
-55 ~ +150
Unit
V
V
A
A
W
W/℃
℃/W
℃
01-June-2005 Rev. A
Page 1 of 4

STT3434 데이터시트, 핀배열, 회로
Elektronische Bauelemente
STT3434
6.1 A, 30 V, RDS(ON) 34 mΩ
N-Channel Enhancement Mode Power Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate Leakage Current
Zero Gate Voltage Drain Current (Tj=25℃)
Zero Gate Voltage Drain Current (Tj=75℃)
Drain-Source On-Resistance2
Total Gate Charge2
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
BVDSS
VGS(th)
gfs
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
--
--
20 -
- ±100
-1
-5
- 34
- 50
8 12
1.9 -
2.6 -
21 -
45 -
40 -
30 -
V VGS = 0, ID = 250uA
V VDS = VGS, ID = 1mA
S VDS = 10V, ID = 6.1A
nA VGS = ±12 V
uA VDS = 30 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
mΩ VGS = 4.5 V, ID = 6.1 A
VGS = 2.5 V, ID = 2.0 A
ID = 6.1 A
nC VDS = 15 V
VGS = 4.5 V
VDS = 15 V
ID = 1 A
ns VGS = 4.5 V
RG = 6 Ω
RL = 15 Ω
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.2 V IS = 1.7 A, VGS = 0 V
Reverse Recovery Time2
Trr - 40 - ns IS = 1.7 A, dl/dt = 100A/us
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width300us, duty cycle ≦ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t ≦ 5 sec; 180°C/W when mounted on Min. copper pad.
01-June-2005 Rev. A
Page 2 of 4



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