A1337 반도체 회로 부품 판매점
PNP Transistor - 2SA1337
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 Hitachi Semiconductor |
2SA1337
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• HF amplefier
Outline
SPAK
12 3
1. Emitter
2. Collector
3. Base
2SA1337
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–55
–50
–5
–100
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
–55
Collector to emitter breakdown V(BR)CEO
voltage
–50
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
I CBO
I EBO
hFE*1
VBE
VCE(sat)
—
—
100
—
—
Gain bandwidth product
Collector output capacitance
fT
Cob
—
—
Noise figure
NF —
Typ
—
—
—
—
—
—
—
—
200
—
1.0
Note: 1. The 2SA1337 is grouped by hFE as follows.
BC
100 to 200 160 to 320
Max Unit Test conditions
—V
IC = –10 µA, IE = 0
—V
IC = –1 mA, RBE = ∞
—V
IE = –10 µA, IC = 0
–0.5
–0.5
320
–0.75
–0.2
µA
µA
V
V
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
— MHz VCE = –12 V, IC = –2 mA
4.5 pF
VCB = –10 V, IE = 0, f = 1 MHz
5.0 dB
VCE = –6 V, IC = –0.1 mA,
Rg = 1 kΩ, f = 1 kHz
See characteristic curves of 2SA1031.
2
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제조업체: Hitachi Semiconductor
( hitachi )
A1337 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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