BUK9E2R3-40E 반도체 회로 부품 판매점
N-channel TrenchMOS logic level FET
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 NXP Semiconductors |
BUK9E2R3-40E
N-channel TrenchMOS logic level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
- - 120 A
- - 293 W
- 2.1 2.5 mΩ
- 29.6 - nC
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NXP Semiconductors
BUK9E2R3-40E
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
123
I2PAK (SOT226)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9E2R3-40E
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
4. Marking
Table 4. Marking codes
Type number
BUK9E2R3-40E
Marking code
BUK9E2R3-40E
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
BUK9E2R3-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
[1][2]
[3]
[3]
Min
-
-
-10
-15
-
-
-
-
Max Unit
40 V
40 V
10 V
15 V
120 A
120 A
988 A
293 W
© NXP B.V. 2012. All rights reserved
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