파트넘버.co.kr BUK953R2-40B 데이터시트 PDF


BUK953R2-40B 반도체 회로 부품 판매점

N-channel TrenchMOS logic level FET



NXP Semiconductors 로고
NXP Semiconductors
BUK953R2-40B 데이터시트, 핀배열, 회로
BUK953R2-40B
N-channel TrenchMOS logic level FET
17 April 2014
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Tj = 25 °C; Fig. 13
[1]
Min Typ Max Unit
- - 40 V
- - 100 A
- - 300 W
- 2.4 2.8 mΩ
- 2.7 3.2 mΩ
- 37 - nC
Scan or click this QR code to view the latest information for this product


BUK953R2-40B 데이터시트, 핀배열, 회로
NXP Semiconductors
BUK953R2-40B
N-channel TrenchMOS logic level FET
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ
--
[1] All individual parts of device must be ≤ 175 °C to achieve maximum current rating.
Max Unit
1.2 J
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK953R2-40B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
BUK953R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13




PDF 파일 내의 페이지 : 총 13 페이지

제조업체: NXP Semiconductors

( nxp )

BUK953R2-40B data

데이터시트 다운로드
:

[ BUK953R2-40B.PDF ]

[ BUK953R2-40B 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BUK953R2-40B

N-channel TrenchMOS logic level FET - NXP Semiconductors



BUK953R2-40E

N-channel TrenchMOS logic level FET - NXP Semiconductors