K8A50D 반도체 회로 부품 판매점
TK8A50D
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 Toshiba |
TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
±30
8
32
40
165
8
4.0
150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.4 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-07
1 2013-11-01
Free Datasheet http://www.datasheet4u.com/
TK8A50D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 10 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯
500
2.0
⎯
1.0
⎯
⎯
⎯
tr
10 V
VGS
0V
ID = 4 A VOUT
⎯
ton
50 Ω
RL = 50 Ω ⎯
tf
VDD ≈ 200 V
toff Duty ≤ 1%, tw = 10 μs
Qg
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 8 A
Qgd
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.7
4.0
800
4
100
20
40
12
60
16
10
6
Max
±1
10
⎯
4.0
0.85
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 8 A
⎯ ⎯ 32 A
⎯ ⎯ −1.7 V
⎯ 1200 ⎯
ns
⎯ 10 ⎯ μC
Marking
K8A50D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Part No. (or abbreviation code)
Lot No.
The
RoHS is
the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
Note 4
certain hazardous substances in electrical and electronic equipment.
2 2013-11-01
Free Datasheet http://www.datasheet4u.com/
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제조업체: Toshiba
( toshiba )
K8A50D data
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[ K8A50D.PDF ]
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