2N3960 반도체 회로 부품 판매점
Type 2N3960 Geometry 0003 Polarity NPN
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 Semicoa Semiconductor |
Type 2N3960
Geometry 0003
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-18 case.
• Also available in chip form using
the 0003 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/399 which
Semicoa meets in all cases.
Data Sheet No. 2N3960
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
TO-18
Rating
Maximum Ratings
TC = 25oC unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
12
Collector-Base Voltage
VCBO
20
Emitter-Base Voltage
Power Dissipation, TA = 25oC
Derate above 25oC
VEBO
PT
4.5
400
2.3
Operating Junction Temperature
TJ -65 to +200
Storage Temperature
TSTG
-65 to +200
Unit
V
V
V
mW
mW/oC
oC
oC
Data Sheet No. 2N3960
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
20
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
12
Emitter-Base Breakdown Voltage
IC = 10 µA
V(BR)EBO
4.5
Collector-Emitter Cutoff Current
VCE = 10 V, VBE = 0.4 V
ICEX1
---
VCE = 10 V, VEB = 2.0 V
VCE = 10 V, VEB = 2.0 V, TA = 150oC
ICEX2
ICEX3
---
---
Max
---
---
---
1.0
5.0
5.0
Unit
V
V
V
µA
nA
µA
ON Characteristics
Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V, pulsed
IC = 30 mA, VCE = 1 V, pulsed
IC = 10 mA, VCE = 1.0 V, TC = -55oC
Base-Emitter Saturation Voltage
VCE 1.0 V, IC = 1.0 mA
VCE 1.0 V, IC = 30 mA
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 30 mA, IB = 3.0 mA
Symbol
hFE1
hFE2
hFE3
hFE4
VBE1
VBE2
VCE(sat)1
VCE(sat)2
Min
40
60
30
30
---
---
---
---
Max
---
300
---
---
0.8
1.0
0.2
0.3
Unit
---
---
---
V dc
V dc
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 4 V, IC = 5.0 mA, f = 100 MHz
VCE = 4 V, IC = 10 mA, f = 100 MHz
VCE = 4 V, IC = 30 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Symbol
|hFE1|
|hFE2|
|hFE3|
COBO
CIBO
Min
13
14
12
---
---
Max
---
---
---
2.5
2.5
Unit
---
---
---
pF
pF
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제조업체: Semicoa Semiconductor
( semicoa )
2N3960 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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