RJK0230DPA 반도체 회로 부품 판매점
Silicon N Channel Power MOS FET
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 Renesas |
Preliminary Datasheet
RJK0230DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0541EJ0110
Rev.1.10
Sep 12, 2011
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc=25C
MOS1
25
±20
20
80
20
12
18
15
150
–55 to +150
Ratings
MOS2
25
±12
50
200
50
23
66
35
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0541EJ0110 Rev.1.10
Sep 12, 2011
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
RJK0230DPA
Preliminary
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
25
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.8
8.4
35
1180
252
90
1.0
7.7
3.3
2.0
7.4
4.3
34
5.4
0.83
25
Max
—
±0.1
1
2.5
7.0
10.9
—
1650
—
—
2.2
—
—
—
—
—
—
—
1.08
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 25 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 10 A, VGS = 10 V Note4
ID = 10 A, VGS = 4.5 V Note4
ID = 10 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 20 A
VGS =10 V, ID = 10 A
VDD 10 V
RL = 1.0
Rg = 4.7
IF = 20 A, VGS = 0 Note4
IF =20 A, VGS = 0
diF/ dt = 100 A/s
R07DS0541EJ0110 Rev.1.10
Sep 12, 2011
Page 2 of 10
Free Datasheet http://www.datasheet4u.com/
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