2N6395 반도체 회로 부품 판매점
SCRs 12 AMPERES RMS 50 thru 800 VOLTS
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
Order this document
by 2N6394/D
2N6394
thru
2N6399
Motorola preferred devices
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-07
(TO-220AB)
STYLE 3
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = –40 to 125°C)
2N6394
2N6395
2N6397
2N6398
2N6399
Symbol
VDRM, VRRM
Value
50
100
400
600
800
Unit
Volts
RMS On–State Current (TC = 90°C) (All Conduction Angles)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
ITSM
I2t
12
100
40
Amps
Amps
A2s
Forward Peak Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amps
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2 °C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1999
1
2N6394 thru 2N6399
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
* Forward “On” Voltage
(ITM = 24 A Peak)
* Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(VD = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
* Holding Current
(VD = 12 Vdc, Gate Open)
Turn-On Time
(ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (VD = Rated VDRM)
(ITM = 12 A, IR = 12 A)
(ITM = 12 A, IR = 12 A, TJ = 125°C)
Critical Rate–of–Rise of Off-State Voltage Exponential
(VD = Rated VDRM, TJ = 125°C)
*Indicates JEDEC Registered Data.
Symbol
IDRM, IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Min Typ Max Unit
— — 10 µA
——
2 mA
— 1.7 2.2 Volts
— 5 30 mA
Volts
— 0.7 1.5
0.2 —
—
— 6 40 mA
—1
2 µs
µs
— 15 —
— 35 —
— 50 — V/µs
130
125
120
115
110
105
100
95
90
0
FIGURE 1 — CURRENT DERATING
α
α = CONDUCTION ANGLE
dc
α = 30°
60°
90° 180°
1.0 2.0 3.0 4.0 5.0 6.0 7.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
8.0
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
20
18
16 α
14 α = CONDUCTION ANGLE
12 α = 30° 60°
10
90°
180° dc
8.0
6.0
4.0 TJ ≈ 125°C
2.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
2 Motorola Thyristor Device Data
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