TQP200002 반도체 회로 부품 판매점
ESD Protection Circuit
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 TriQuint Semiconductor |
TQP200002
ESD Protection Device
Applications
Cellular Handsets
Cordless Phone
LNBs
CATV set top boxes
Product Features
Snap-Back ESD protection
Low clamp voltages 15 or 30 V
Low trigger voltages 18, 25, or 41 V
Two bidirectional protection lines
Fast response time, under 1 ns.
ESD Protection: IEC 61000-4-2, level 1
JEDEC HBM, 8 kV
Low capacitance 0.22 pF
Thin Small Leadless SMT Package (A = 1.8 mm2)
General Description
The TQP200002 ESD protection device is fabricated in
GaAs MESFET technology and has been especially
developed for high frequency applications. It delivers bi-
directional protection with very low leakage currents and
extremely low capacitance. It is ideally suited for cellular
handsets, cordless phones, and broadband applications like
CATV set top boxes and LNBs.
Snap-Back Characteristics:
Functional Block Diagram
Pin Configuration
www.DataSheet.net/
Symbol
VI
V2
V3
Function
Measured between pin 1 and pin 3.
Measured between pin 1 and pin 2.
Measured between pin 2 and pin 3.
Data Sheet: Rev N 11/11/11
© 2011 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
Description
TQP200002
ESD Protector Diode
TQP200002-PCB-75 75 Ohm Evaluation Board
TQP200002-PCB-50 50 Ohm Evaluation Board
Standard T/R size = 10,000 pieces on a 13” reel.
- 1 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
TQP200002
ESD Protection Device
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
Total Power Dissipation
IEC 61000-4-2 Air Discharge
IEC 61000-4-2 Contact Discharge
JEDEC Human Body Model (HBM)
Rating
-65 to +150 oC
600 mW
3000 V
3000 V
8000 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vd13
Vd12
Vd23
Tcase
TJ (for >106 hours MTTF)
Min
-7
-7
-17
-40
Typ
--
--
--
Max
7
7
17
85
160
Units
V
V
V
oC
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC
Parameter
Trigger Voltage, V1
Clamp Voltage, Vcl1
Leakage Current, Ileak1
Leakage Current, Ileak1
Capacitance, C1
Trigger Voltage, V2
Clamp Voltage, Vcl2
Leakage Current, Ileak2
Leakage Current, Ileak2
Capacitance, C2
Trigger Voltage, V3
Clamp Voltage, Vcl3
Leakage Current, Ileak3
Leakage Current, Ileak3
Capacitance, C3
Conditions
P1,3
P1,3
1V
15 V
(1V, 10 MHz)
P1,2
P1,2
1V
15 V
(1V, 10 MHz)
P2,3
P2,3
1V
15 V
(1V, 10 MHz)
Min
13
10
www.DataSheet.net/
20
10
36
20
Typical
18
15
20
500
290
25
15
20
500
290
41
30
15
300
220
Max
23
20
30
20
46
40
Units
V
V
nA
nA
fF
V
V
nA
nA
fF
V
V
nA
nA
fF
Data Sheet: Rev N 11/11/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
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( triquint )
TQP200002 data
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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