LS131 판매점 - General Purpose

LS131

MONOLITHIC DUAL

PNP TRANSISTOR

Linear Systems replaces discontinued Intersil IT131

The LS131 is a monolithic pair of PNP transistors

mounted in a single P-DIP package. The monolithic

dual chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The LS131 is a direct replacement for discontinued

Intersil IT131.

FEATURES

Direct Replacement for INTERSIL IT131

HIGH hFE @ LOW CURRENT

OUTPUT CAPACITANCE

VBE tracking

ABSOLUTE MAXIMUM RATINGS 1

≥ 80 @ 10µA

≤ 2.0pF

≤ 10µV°C

The 8 Pin P-DIP provides ease of manufacturing, and

@ 25°C (unless otherwise noted)

the symmetrical pinout prevents improper orientation.

Maximum Temperatures

(See Packaging Information).

Storage Temperature

Operating Junction Temperature

‐65°C to +200°C

‐55°C to +150°C

Maximum Power Dissipation

LS131 Features:

High hfe at low current

Tight matching

Tight VBE tracking

Low Output Capacitance

Continuous Power Dissipation (One side)

Continuous Power Dissipation (Both sides)

Linear Derating factor (One side)

Linear Derating factor (Both sides)

Maximum Currents

250mW

500mW

2.3mW/°C

4.3mW/°C

Collector Current

10mA

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

|VBE1 – VBE2 |

Base Emitter Voltage Differential

‐‐ ‐‐ 3 mV

IC = 10µA, VCE = 5V

∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential

Change with Temperature

‐‐ ‐‐ 10 µV/°C

IC = 10µA, VCE = 5V

TA = ‐55°C to +125°C

|IB1 – IB2 |

Base Current Differential

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

Click To BuyBVCBO

Collector to Base Voltage

‐‐ ‐‐ 25

TYP.

‐‐

MAX.

‐‐

UNITS

nA IC = 10µA, VCE = 5V

CONDITIONS

IC = 10µA, IE = 0

BVCEO

Collector to Emitter Voltage

45 ‐‐ ‐‐ V

BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V

BVCCO

Collector to Collector Voltage

60 ‐‐ ‐‐ V

IC = 10µA, IB = 0

IE = 10µA, IC = 02

IC = 10µA, IE = 0

hFE

DC Current Gain

80 ‐‐ ‐‐

IC = 10µA, VCE = 5V

100 ‐‐

‐‐

IC = 1.0mA, VCE = 5V

VCE(SAT)

Collector Saturation Voltage

‐‐ ‐‐ 0.5 V

IC = 0.5mA, IB = 0.05mA

IEBO

Emitter Cutoff Current

‐‐ ‐‐ 1 nA

IC = 0, VEB = 3V

ICBO

Collector Cutoff Current

‐‐ ‐‐ 1 nA

IE = 0, VCB = 45V

COBO

Output Capacitance

‐‐ ‐‐ 2 pF

IE = 0, VCB = 5V

CC1C2

IC1C2

Collector to Collector Capacitance

Collector to Collector Leakage Current

‐‐

‐‐ 4 pF

‐‐ 10 nA

VCC = 0V

VCC = ±60V

Current Gain Bandwidth Product 110 ‐‐

‐‐ MHz

IC = 1mA, VCE = 5V

Narrow Band Noise Figure

‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,

f = 1KHz

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

Available Packages:

LS131 in P-DIP

LS131 available as bare die

Please contact Micross for full package and die dimensions:

Email: [email protected]

Web: www.micross.com/distribution.aspx

P-DIP (Top View)

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

LS131 반도체 회로 부품 판매점

General Purpose

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