MGF4941AL 반도체 회로 부품 판매점
SUPER LOW NOISE InGaAs HEMT
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 Mitsubishi Electric Semiconductor |
18/May/2007
DESCRIPTION
The MGF4941AL super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in Ku band amplifiers.
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG
GD-32
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 4000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
(Ta=25°C )
Ratings
-4
-4
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
°C
°C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
V(BR)GDO Gate to drain breakdown voltage
IGSS
Gate to source leakage current
IDSS
Saturated drain current
VGS(off) Gate to source cut-off voltage
www.DGatsaSheet4AUss.coocimated gain
NFmin. Minimum noise figure
(Ta=25°C )
Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
f=12GHz
MIN.
-3
--
15
-0.1
12.0
--
Limits
TYP.
--
--
--
--
13.5
0.35
MAX
--
50
60
-1.5
--
0.5
Unit
V
µA
mA
V
dB
dB
MITSUBISHI
(1/6)
18/May/2007
Fig.1
Top
(0.30)
3.2±0.1
2.6±0.1
0.5±0.1
(0.30)
①
Ac
AA
②②
Side
③
2.2±0.1
1.7±0.1
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
Bottom
(2.3)
Unit : mm
① Gate
② Source
③ Drain
www.DataSheet4U.com
MITSUBISHI
(2/6)
(GD-32)
|
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
MGF4941AL data
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[ MGF4941AL.PDF ]
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