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PMR370XN
N-channel µTrenchMOS™ extremely low level FET
M3D173 Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Surface mounted package
s Low on-state resistance
s Footprint 63% smaller than SOT23
s Low threshold voltage.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V
s Ptot ≤ 0.53 W
s ID ≤ 0.84 A
s RDSon ≤ 440 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT416 (SC-75), simplified outline and symbol
Description
Simplified outline
gate (g)
source (s)
3
drain (d)
12
Top view
MBK090
SOT416 (SC-75)
3. Ordering information
Symbol
d
g
MBB076
s
Table 2: Ordering information
Type number
Package
Name
Description
PMR370XN
SC-75
Plastic surface mounted package; 3 leads
Version
SOT416
Philips Semiconductors
www.DataSheet4U.com
PMR370XN
N-channel µTrenchMOS™ extremely low level FET
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
Tsp = 100 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
Min Max Unit
- 30 V
- 30 V
- ±12 V
- 0.84 A
- 0.53 A
- 1.68 A
- 0.53 W
−55 +150 °C
−55 +150 °C
- 0.44 A
- 0.88 A
9397 750 12664
Product data
Rev. 01 — 3 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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