K4X51163PC-FG 반도체 회로 부품 판매점
32M x16 Mobile-DDR SDRAM
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 Samsung semiconductor |
K4X51163PC - L(F)E/G
Mobile-DDR SDRAM
32M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• 1 /CS
• 1 CKE
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
www.DataSheet4U.c- oOmutput Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle
- 7.8us for -25 to 85 °C
Operating Frequency
Speed @CL2*1
Speed @CL3*1
Note :
1. CAS Latency
DDR266
83Mhz
133Mhz
DDR222
66Mhz
111Mhz
Address configuration
Organization
32M x16
- DM is internally loaded to match DQ and DQS identically.
Bank
BA0,BA1
Row
A0 - A12
Column
A0 - A9
Ordering Information
Part No.
K4X51163PC-L(F)E/GC3
K4X51163PC-L(F)E/GCA
Max Freq.
133MHz(CL=3),83MHz(CL=2)
111MHz(CL=3),66MHz(CL=2)
- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)
- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)
- C3/CA : 133MHz(CL=3) / 111MHz(CL=3)
Interface
LVCMOS
Package
60FBGA
Pb (Pb Free)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
February 2006
K4X51163PC - L(F)E/G
FUNCTIONAL BLOCK DIAGRAM
Mobile-DDR SDRAM
www.DataSheet4U.com
CK, CK
ADD
CK, CK
Bank Select
16
Data Input Register
Serial to parallel
LWE
LDM
32
4Mx32
4Mx32
4Mx32
4Mx32
32 16
X16
DQi
Column Decoder
Latency & Burst Length
LCKE
LRAS LCBR LWE
LCAS
Programming Register
LWCBR
Data Strobe
LDM
Timing Register
DM Input Register
CK, CK CKE CS RAS CAS WE
DM
February 2006
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제조업체: Samsung semiconductor
( samsung )
K4X51163PC-FG data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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관련 데이터시트
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32M x16 Mobile-DDR SDRAM - Samsung semiconductor
K4X51163PC-FG
32M x16 Mobile-DDR SDRAM - Samsung semiconductor