SFT1341 반도체 회로 부품 판매점
General-Purpose Switching Device Applications
|
|
 Sanyo Semicon Device |
Ordering number : ENA1444
SFT1341
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
SFT1341
Features
• 1.8V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
--40
±10
--10
--40
1.0
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : T1341
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--5A
ID=--5A, VGS=--4.5V
ID=--5A, VGS=--2.5V
ID=--2.5A, VGS=--1.8V
min
--40
--0.4
4.6
Ratings
typ
max
--1
±10
--1.4
Unit
V
μA
μA
V
7.7 S
86 112 mΩ
110 154 mΩ
140 210 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
40809PA MS IM TC-00001932 No. A1444-1/4
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
4
SFT1341
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--20V, VGS=--4.5V, ID=--10A
VDS=--20V, VGS=--4.5V, ID=--10A
VDS=--20V, VGS=--4.5V, ID=--10A
IS=--10A, VGS=0V
Package Dimensions
unit : mm (typ)
7003-004
2.3
0.5
6.5
5.0
4
www.DataSheet4U.com
Ratings
min typ max
Unit
650 pF
65 pF
50 pF
9.0 ns
50 ns
81 ns
80 ns
8.0 nC
1.4 nC
2.5 nC
--1.0
--1.5
V
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 t o 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
VDD= --20V
ID= --5A
RL=4Ω
D VOUT
SFT1341
P.G 50Ω S
No. A1444-2/4
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Sanyo Semicon Device
( sanyo )
SFT1341 data
데이터시트 다운로드 :
[ SFT1341.PDF ]
[ SFT1341 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SFT1341
General-Purpose Switching Device Applications - Sanyo Semicon Device
SFT1341
Power MOSFET ( Transistor ) - ON Semiconductor
SFT1342
P-Channel Silicon MOSFET General-Purpose Switching Device Applications - Sanyo Semicon Device
SFT1342
Power MOSFET ( Transistor ) - ON Semiconductor
SFT1345
P-Channel Silicon MOSFET - Sanyo Semicon Device
SFT1345
Power MOSFET ( Transistor ) - ON Semiconductor