RQA0003DNS 반도체 회로 부품 판매점
Silicon N-Channel MOS FET
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 Renesas Technology |
www.DataSheet4U.com
RQA0003DNS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz)
• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)
Outline
RENESAS Package code: PWSN0002ZA-A
(Package name: HWSON-2 <WSON0303-2>)
32
1
32
1
1
Note: Marking is “A0003”.
3
2
REJ03G0584-0300
Rev.3.00
Oct 12, 2006
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
2.4
7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.3.00 Oct 12, 2006 page 1 of 12
RQA0003DNS
www.DaEtalSehceettr4iUc.caolmCharacteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency
PAE
Min.
—
—
0.15
1.7
—
—
—
35
3.16
50
Typ
—
—
0.4
2.4
44
25
6.0
36
3.98
65
Max.
10
±2
0.8
3.1
—
—
—
—
—
—
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.2 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 400 mA,
f = 520 MHz,
Pin = +20 dBm (100 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
8
6
4
2
0
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
2.0 V
2.5
Pulse Test
1.75 V
2.0
1.5 V
1.5
1.25 V
1.0
0.5 VGS = 1.0 V
0.0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
3.0
VDS = 6 V
2.5 Pulse Test
2.0
|yfs|
1.5
1.0
ID
0.5
0
0 0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 6 V
Pulse Test
1.0
0.1
0.1
1
Drain Current ID (A)
10
Rev.3.00 Oct 12, 2006 page 2 of 12
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제조업체: Renesas Technology
( renesas )
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