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Renesas Technology |
H7N0608AB
Silicon N Channel MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
• Low on-resistance
RDS(on) = 6.0 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
TO-220AB
REJ03G0143-0100Z
Rev.1.00
Oct.30.2003
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Rev.1.00, Oct.30.2003, page 1 of 9
H7N0608AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
www.DataSheet4U.com Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
PchNote2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
70
280
70
40
137
80
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00, Oct.30.2003, page 2 of 9
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