DG2001 반도체 회로 부품 판매점
LOW - VOLTAGE SINGLE SPDT ANALOG SWITCH
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 Vishay Siliconix |
New Product
DG2001
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - rON: 3 W
D Fast Switching - tON : 20 ns, tOFF: 10 ns
D Low Leakage - ICOM: 0.2-nA
D Low Charge Injection - QINJ: 5 pC
www.DataSheeDt4UL.ocowmPower Consumption
D TTL/CMOS Compatible
D ESD Protection > 2000 V (Method 3015.7)
D TSOP-6 Package
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Reduce Board Space
APPLICATIONS
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
DESCRIPTION
The DG2001 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed, low
on-resistance and small physical size, the DG2001 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG2001 is built on Vishay Siliconix’s low voltage JI2
process. The DG2001 has a minimum 2000-V, ESD
protection, per Method 3015.7. An epitaxial layer prevents
latchup. Break-before-make is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN
V+
GND
1
2
3
TSOP-6
6 NO (Source1)
5 COM
4 NC (Source2)
Top View
Logic
0
1
TRUTH TABLE
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
TSOP-6
Part Number
DG2001DV
Document Number: 71398
S-03281—Rev. B, 19-Mar-01
www.vishay.com
1
DG2001
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
ESD (MIL-STD-883B, Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Power Dissipation (Packages)b
TSOP-6c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7.0 mW/_C above 25_C
www.DataSheet4U.com
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Analog Signal Ranged
On-Resistance
rON Flatnessd
Switch Off Leakage Currentg
Channel-On Leakage Currentg
VNO, VNC,
VCOM
rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA
rON
Flatness
INO(off),
INC(off)
ICOM(off)
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
ICOM(on)
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
VIN = 0 or V+
Full
Full
Full
Full
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitancend
Channel-On Capacitanced
Power Supply
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off),
CNC(off)
CON
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Power Supply Range
Power Supply Current
Power Consumption
V+
I+
PC
VIN = 0 or V+
Limits
–40 to 85_C
Minb Typc Maxb
0
–300
–3.5
–300
–3.5
–350
–3.5
15
17
5
V+
30
32
300
3.5
300
3.5
300
3.5
1.6
0.4
4
11
30 50
53
15 30
33
1 15
1 10
–71
–70
17
50
1.8 2.20
0.01
1.0
2.2
Unit
V
W
pA
nA
pA
nA
pA
nA
V
pF
mA
ns
pC
dB
pF
V
mA
mW
www.vishay.com
2
Document Number: 71398
S-03281—Rev. B, 19-Mar-01
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DG2001 data
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[ DG2001.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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