DG2015 반도체 회로 부품 판매점
Dual DPDT Analog Switch
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 Vishay Siliconix |
New Product
DG2015
Vishay Siliconix
Low-Voltage, Low rON, Dual DPDT Analog Switch
FEATURES
D Low Voltage Operation (2.7 V to 3.3 V)
D Low On-Resistance - rON: 0.85 W
D 3 dB Loss @ 100 MHz
www.DataSheeDt4UF.caosmt Switching: tON = 40 ns
tOFF = 35 ns
D QFN-16 Package
BENEFITS
D Reduced Power Consumption
D High Accuracy
D Reduce Board Space
D TTL/1.8-V Logic Compatible
D High Bandwidth
APPLICATIONS
D Cellular Phones
D Speaker Headset Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Battery Operated Systems
DESCRIPTION
The DG2015 is a dual double-pole/double-throw monolithic
CMOS analog switch designed for high performance switching
of analog signals. Combining low power, high speed, low
on-resistance and small physical size, the DG2015 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG2015 is built on Vishay Siliconix’s low voltage JI2 process.
An epitaxial layer prevents latchup. Break-before-make is
guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2015
QFN-16 (4 X 4)
NC1 COM1 GND COM4
16 15 14 13
NO1 1
INA 2
NO2 3
NC2 4
12 NC4
11 NO4
10 INB
9 NO3
5678
COM2 V+ COM3 NC3
Top View
Logic
0
1
TRUTH TABLE
NC1, 2, 3 and 4 NO1, 2, 3 and 4
ON
OFF
OFF
ON
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
16-Pin QFN (4 x 4 mm)
Part Number
DG2015DN
Document Number: 71971
S-03423—Rev. B, 03-Mar-03
www.vishay.com
1
DG2015
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "150 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Package Solder Reflow Conditionsd
16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
www.DataSheet4U.com
Power Dissipation (Packages)b
QFN-16c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/_C above 70_C
d. Manual soldering with iron is not recommended for leadless components.
The QFN is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufactur-
ing. A solder fillet at the exposed copper lip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Analog Signal Ranged
VNO, VNC,
VCOM
On-Resistance
rON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
rON Flatness
rON Match
Switch Off Leakage Current
rON
Flatness
DrON
INO(off),
INC(off)
ICOM(off)
V+ = 2.7 V
VCOM = 0 to V+, INO, INC = 100 mA
V+ = 3.3 V, VNO, VNC = 1 V/3 V
VCOM = 3 V/1 V
Channel-On Leakage Current
ICOM(on)
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
VIN = 0 or V+
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off)
CNC(off)
CNO(on)
CNC(on)
VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Tempa
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
Full
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Limits
- 40 to 85_C
Minb Typc Maxb
0
0.85
0.16
0.15
-1
- 10
-1
- 10
-1
- 10
V+
1.6
1.7
1
10
1
10
1
10
2
0.4
4
-1 1
40 65
67
35 60
62
13
7
- 67
- 70
63
67
200
196
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
www.vishay.com
2
Document Number: 71971
S-03423—Rev. B, 03-Mar-03
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DG2015 data
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[ DG2015.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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