APT47N60BCF 반도체 회로 부품 판매점
Super Junction FREDFET
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 Advanced Power Technology |
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
www.DataShee•t4EUx.tcroemme dv/dt Rated
600V 46A 0.083Ω
APT47N60BCF
APT47N60SCF
APT47N60BCFG* APT47N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Popular TO-247 or Surface Mount D3 Package
(B)
TO-247
D3PAK
(S)
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT47N60B_SCF(G) UNIT
VDSS
ID
IDM
VGS
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
600 Volts
46
29 Amps
115
±30 Volts
417 Watts
1.67 W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 46A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
-55 to 150
260
80
20
1
1800
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
B(VR)DS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 4 (VGS = 10V, ID = 29A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
600
0.083
6
5000
±100
345
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts
DYNAMIC CHARACTERISTICS
APT47N60BCF_SCF(G)
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
www.DataSheet4U.Ecoofmf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 46A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 380V
ID = 46A @ 25°C
RG = 3.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 46A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 46A, RG = 4.3Ω
MIN
TYP
7290
1735
41
255
43
135
30
30
100
15
885
590
1270
725
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
ISM
VSD
dv/dt
t rr
Q rr
IRRM
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 4 (VGS = 0V, IS = -46A)
Peak Diode Recovery dv/dt 7
Reverse Recovery Time
(IS = -46A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -46A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
46 Amps
115
1.2 Volts
40 V/ns
210 ns
350
2.0 µC
5.4
18
28
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC Junction to Case
RθJA Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
0.30
62
4 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Maximum 125°C diode commutation speed = di/dt 600A/µs
°C/W
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.15 0.5
Note:
0.10 0.3
t1
t2
0.05 0.1
0 0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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