APT40M70B2LVFR 반도체 회로 부품 판매점
POWER MOS V FREDFET
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 Advanced Power Technology |
400V 57A 0.070Ω
APT40M70B2VFR APT40M70LVFR
APT40M70B2VFRG* APT40M70LVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
www.DataSheet4aUls.coomachieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT40M70B2_LVFR(G)
400
57
228
±30
±40
520
4.16
-55 to 150
300
57
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
400
57
2
0.070
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
www.DataSheet4U.com
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 57A @ 25°C
VGS = 15V
VDD = 200V
ID = 57A @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -57A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT40M70B2_LVFR(G)
MIN TYP MAX UNIT
7410 8890
1140
450
1600
675
pF
330 495
40 40 nC
125 190
16 32
16 32 ns
55 80
5 10
MIN TYP MAX UNIT
57 Amps
228
1.3 Volts
15 V/ns
250 ns
500
1.6 µC
5.5
15
27 Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.24
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤400V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
0.1
0.05
0.01
0.005
0.001
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
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관련 데이터시트
APT40M70B2LVFR
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POWER MOS V FREDFET - Advanced Power Technology