파트넘버.co.kr RSB12Z 데이터시트 PDF


RSB12Z 반도체 회로 부품 판매점

Low Capacitance Protection Device



ROHM Semiconductor 로고
ROHM Semiconductor
RSB12Z 데이터시트, 핀배열, 회로
Diodes
RSB12Z
Low Capacitance Protection Device
RSB12Z
zApplication
ESD Protection
www.DataSheet4U.com
zFeatures
1) Ultra small mold type. (VMD3)
2) Low capacitance
3) Bi direction
zConstruction
Silicon Epitaxial Planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
0.4
1.2±0.1
0.32±0.05
(3)
0.22±0.05
(1) (2)
0.22±0.05
0.4 0.4
0.13±0.05
0～0.1
0.5±0.05
0.4
0.5
VMD3
0.8
zStructure
ROHM : VMD3
dot(year week factory)
zTaping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
0.3±0.1
1.3±0.05
　　　 0
(4.0±0.1)
2.0±0.05
φ0.5±0.05
0.6±0.05
0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
Tj
Tstg
Limits
150
150
-55 to +150
Unit
mW
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
VZ
IR
Ct
Min.
9.6
-
-
Typ. Max.
- 14.4
- 0.10
1-
Unit Conditions
V IZ=5mA
µA VR=9V
pF f=1MHz,VR=0V
1/2

RSB12Z 데이터시트, 핀배열, 회로
Diodes
RSB12Z
zElectrical characteristics curve
www.DataSheet4U.com
10
1
0.1
0.01
0.001
11
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=125℃
Ta=150℃
12 13 14 15
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
16
10000
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
12345678
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
9
13.8 10
Ta=25℃
IZ=5mA
9
Ta=25℃
VR=9V
13.7
n=30pcs
8
n=30pcs
7
13.6 6
5
13.5 4
AVE:13.572V
13.4
13.3
3
2 AVE:0.3089nA
1
0
Vz DISPERSION MAP
IR DISPERSION MAP
10
f=1MHz
1
0.1
0123456789
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1.5
1.4
Ta=25℃
f=1MHz
1.3 VR=0V
1.2 n=10pcs
1.1
1
0.9 AVE:0.996pF
0.8
0.7
0.6
0.5
Ct DISPERSION MAP
100
10
1
0.1 1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
10000
Mounted on epoxy board
IM=1mA
IF=10mA
1000
1ms time
300us
Rth(j-a)
ｶﾞﾗｽｴﾎﾟｷｼ基板実装時
IM=10mA
IF=100mA
100 Rth(j-c)
1ms time
300us
10
10 0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
2/2



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전화번호 : 051-319-2877

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