MIR-3305 반도체 회로 부품 판매점
SUBMINIATURE PHOTOINTERRUPTER
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 Unity Opto Technology |
SUBMINIATURE
PHOTOINTERRUPTER
Description
The MIR-3305 consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
Package Dimensions
DC
www.DataSheet4U.com
A
Anode Mark
B
Features
Compact and thin
MIR-3305 : Compact DIP, long lead type
Optimum detecting distance : 0.8 - 1.0 mm
Wavelength : 940nm
Visible light cut-off type
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
MIR-3305
Unit: mm
Emitter D
Anode A
TOP VIEW
C Col lector
B Cathode
Absolute Maximum Ratings
Parameter
Symbol Minimum Rating Maximum Rating
Continuous Forward Current
IF
50
INPUT Reverse Voltage
VR
5
Power Dissipation
Pad
75
Collector-emitter breakdown voltage V(BR)CEO
30
OUTPUT Emitter-Collector breakdown voltage V(BR)ECO
5
Collector power dissipation
Pc
75
Total power dissipation PTOT 100
Operating Temperature Range
Topr -25 oC to + 85oC
Storage Temperature Range
Tstg -40 oC to + 100oC
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260 oC
@ TA=25oC
Unit
mA
V
mW
V
V
mW
mW
Unity Opto Technology Co., Ltd.
12/10/2002
MIR-3305
Optical-Electrical Characteristics
Input
Output
Parameter
Forward Voltage
Reverse Current
Collector Dark Current
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*1 Collector Current
Transfer
Characteristic
s Response Time (RISE)
Response Time (FALL)
*2 Leak Current
symbol
VF
IR
Iceo
B
C
Ic
D
E
tr
tf
ILEAK
Min.
-
-
-
38
56
80
112
-
-
-
@ TA=25oC
Typ. Max. Unit. Test Conditions
- 1.3 V IF =20mA
- 10 µA VR =5V
- 0.2 µA Vce =10V
- 75
- 108 µA IF=4mA,Vce=5V
- 151
216
20 100 µS Ic=100µA, Vce =2V
20 100 µS RL =1kΩ
- 0.1 µA Vce =5V
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
*2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface
Device
1 mm-thick glass
Typical Optical-Electrical Characteristic Curves
60
50
40
30
20
10
0
-25 0
25 50 75 100
Ambient Temperature TA (oC)
Fig.1 forward Current VS.
Ambient Temperature
50
40
30
20
10
0
0 0.5 1 1.5
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
120
100
PTOT
80 Pad , PC
60
40
20
0
-25 0 25 50 75 100
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs.
Ambient Temperature
600
500
Vce=5V
Ta=25oC
400
300
200
100
0
0 5 10 15
Forward Current IF (mA)
Fig.4 Collector Current vs.
Forward Current
20
Unity Opto Technology Co., Ltd.
12/10/2002
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제조업체: Unity Opto Technology
( uop )
MIR-3305 data
데이터시트 다운로드 :
[ MIR-3305.PDF ]
[ MIR-3305 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
MIR-3301
SUBMINIATURE PHOTOINTERRUPTER - Unity Opto Technology
MIR-3305
SUBMINIATURE PHOTOINTERRUPTER - Unity Opto Technology