BUK9604-40A 반도체 회로 부품 판매점
(BUK9x04-40A) TrenchMOS logic level FET
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 NXP Semiconductors |
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BUK95/96/9E04-40A
TrenchMOS™ logic level FET
Rev. 01 — 24 October 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);
BUK9E04-40A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d) [1] mb
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
123
MBK112
SOT404 (D2-PAK) SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
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Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 5 V; ID = 25 A
Tj = 25 °C; VGS = 4.3 V; ID = 25 A
Tj = 25 °C; VGS = 10 V; ID = 25 A
Typ
-
[1] -
-
-
3.5
3.7
2.9
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IDR reverse drain current (DC)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
pulsed reverse drain current
Avalanche ruggedness
WDSS non-repetitive avalanche energy
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
VDS ≤ 40 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Min
-
-
-
[1] -
[2] -
[2] -
-
-
−55
−55
[1] -
[2] -
-
-
Max Unit
40 V
198 A
300 W
175 °C
4.4 mΩ
5.9 mΩ
4 mΩ
Max Unit
40 V
40 V
±15 V
198 A
75 A
75 A
794 A
300
+175
+175
W
°C
°C
198 A
75 A
794 A
1.6 J
9397 750 08649
Product data
Rev. 01 — 24 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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BUK9604-40A data
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